ME2306AN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: ME2306AN
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.36 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 2.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.4 V
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.037 Ohm
   Paquete / Cubierta: DFN1006-3L

Búsqueda de reemplazo de MOSFET ME2306AN

ME2306AN Datasheet (PDF)

..1. Size:730K matsuki electric
me2306an me2306an-g.pdf

Preliminary-ME2306AN/ME2306AN-G N-Channel 30V (D-S) MOSFETGENERAL DESCRIPTIONFEATURES The ME2306AN is the N-Channel logic enhancement mode power RDS(ON)37m@VGS=10Vfield effect transistors, using high cell density, DMOS trench RDS(ON)40m@VGS=4.5Vtechnology. This high density process is especially tailored to RDS(ON)53m@VGS=2.5Vminimize on-state r

7.1. Size:1039K matsuki electric
me2306as me2306as-g.pdf

ME2306AS/ME2306AS-G N-Channel 30V (D-S)MOSFET GENERAL DESCRIPTION FEATURES The ME2306AS is the N-Channel logic enhancement mode power RDS(ON)34.5m@VGS=10V field effect transistors, using high cell density, DMOS trench RDS(ON)38m@VGS=4.5V technology.This high density process is especially tailored to RDS(ON)50m@VGS=2.5V minimize on-state resistance.These

7.2. Size:1203K matsuki electric
me2306a me2306a-g.pdf

ME2306A/ME2306A-G N-Channel 30V (D-S)MOSFET GENERAL DESCRIPTION FEATURES The ME2306A is the N-Channel logic enhancement mode power field RDS(ON)34.5m@VGS=10V effect transistors, using high cell density, DMOS trench technology. RDS(ON)38m@VGS=4.5V This high density process is especially tailored to minimize on-state RDS(ON)50m@VGS=2.5V resistance. Su

8.1. Size:1599K matsuki electric
me2306bs me2306bs-g.pdf

ME2306BS/ME2306BS-G N-Channel 30V (D-S)MOSFET GENERAL DESCRIPTION FEATURES The ME2306BS is the N-Channel logic enhancement mode power RDS(ON)38m@VGS=10V field effect transistor, using high cell density, DMOS trench RDS(ON)43m@VGS=4.5V technology. This high density process is especially tailored to RDS(ON)62m@VGS=2.5V minimize on-state resistance. These

8.2. Size:879K matsuki electric
me2306n me2306n-g.pdf

ME2306N/ME2306N-G N-Channel 30V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME2306N is the N-Channel logic enhancement mode power RDS(ON)37m@VGS=10Vfield effect transistors, using high cell density, DMOS trench RDS(ON)49m@VGS=4.5Vtechnology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON)mi

8.3. Size:1294K matsuki electric
me2306s me2306s-g.pdf

ME2306S/ME2306S-G N-Channel 30V(D-S) MOSFET GENERAL DESCRIPTION FEATURES FEATURES RDS(ON)37m@ VGS =10V The ME2306S is the N-Channel logic enhancement mode power RDS(ON)49m@VGS=4.5V field effect transistors, using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially tailor

8.4. Size:1115K matsuki electric
me2306ds me2306ds-g.pdf

ME2306DS/ME2306DS-G N-Channel 30V (D-S) MOSFET , ESD ProtectedGENERAL DESCRIPTION FEATURES The ME2306DS is the N-Channel logic enhancement mode power RDS(ON)31m@VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON)52m@VGS=4.5V trench technology. This high density process is especially tailored to ESD Protected minimize on-state

8.5. Size:1457K matsuki electric
me2306d me2306d-g.pdf

ME2306D/ME2306D-G N-Channel 30V (D-S) MOSFET , ESD ProtectedGENERAL DESCRIPTION FEATURES The ME2306D is the N-Channel logic enhancement mode power RDS(ON)31m@VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON)52m@VGS=4.5V trench technology. This high density process is especially tailored to ESD Protected minimize on-state res

8.6. Size:1045K matsuki electric
me2306 me2306-g.pdf

ME2306/ME2306-G N-Channel Enhancement Mode MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)37m@VGS=10V The ME2306 is the N-Channel logic enhancement mode power field RDS(ON)49m@VGS=4.5V effect transistors, using high cell density, DMOS trench technology. Super high density cell design for extremely low RDS(ON) This high density process is especially tailored to

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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