ME2306BS-G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

ME2306BS/ME2306BS-G N-Channel 30V (D-S)MOSFET GENERAL DESCRIPTION FEATURES The ME2306BS is the N-Channel logic enhancement mode power RDS(ON)38m@VGS=10V field effect transistor, using high cell density, DMOS trench RDS(ON)43m@VGS=4.5V technology. This high density process is especially tailored to RDS(ON)62m@VGS=2.5V minimize on-state resistance. These

ME2306N/ME2306N-G N-Channel 30V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME2306N is the N-Channel logic enhancement mode power RDS(ON)37m@VGS=10Vfield effect transistors, using high cell density, DMOS trench RDS(ON)49m@VGS=4.5Vtechnology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON)mi

ME2306S/ME2306S-G N-Channel 30V(D-S) MOSFET GENERAL DESCRIPTION FEATURES FEATURES RDS(ON)37m@ VGS =10V The ME2306S is the N-Channel logic enhancement mode power RDS(ON)49m@VGS=4.5V field effect transistors, using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially tailor

Preliminary-ME2306AN/ME2306AN-G N-Channel 30V (D-S) MOSFETGENERAL DESCRIPTIONFEATURES The ME2306AN is the N-Channel logic enhancement mode power RDS(ON)37m@VGS=10Vfield effect transistors, using high cell density, DMOS trench RDS(ON)40m@VGS=4.5Vtechnology. This high density process is especially tailored to RDS(ON)53m@VGS=2.5Vminimize on-state r

ME2306DS/ME2306DS-G N-Channel 30V (D-S) MOSFET , ESD ProtectedGENERAL DESCRIPTION FEATURES The ME2306DS is the N-Channel logic enhancement mode power RDS(ON)31m@VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON)52m@VGS=4.5V trench technology. This high density process is especially tailored to ESD Protected minimize on-state

ME2306AS/ME2306AS-G N-Channel 30V (D-S)MOSFET GENERAL DESCRIPTION FEATURES The ME2306AS is the N-Channel logic enhancement mode power RDS(ON)34.5m@VGS=10V field effect transistors, using high cell density, DMOS trench RDS(ON)38m@VGS=4.5V technology.This high density process is especially tailored to RDS(ON)50m@VGS=2.5V minimize on-state resistance.These

ME2306D/ME2306D-G N-Channel 30V (D-S) MOSFET , ESD ProtectedGENERAL DESCRIPTION FEATURES The ME2306D is the N-Channel logic enhancement mode power RDS(ON)31m@VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON)52m@VGS=4.5V trench technology. This high density process is especially tailored to ESD Protected minimize on-state res

ME2306/ME2306-G N-Channel Enhancement Mode MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)37m@VGS=10V The ME2306 is the N-Channel logic enhancement mode power field RDS(ON)49m@VGS=4.5V effect transistors, using high cell density, DMOS trench technology. Super high density cell design for extremely low RDS(ON) This high density process is especially tailored to

ME2306A/ME2306A-G N-Channel 30V (D-S)MOSFET GENERAL DESCRIPTION FEATURES The ME2306A is the N-Channel logic enhancement mode power field RDS(ON)34.5m@VGS=10V effect transistors, using high cell density, DMOS trench technology. RDS(ON)38m@VGS=4.5V This high density process is especially tailored to minimize on-state RDS(ON)50m@VGS=2.5V resistance. Su