FDMS7560S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDMS7560S  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 89 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 25 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 49 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0015 Ohm

Encapsulados: POWER56

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FDMS7560S datasheet

 ..1. Size:253K  fairchild semi
fdms7560s.pdf pdf_icon

FDMS7560S

December 2009 FDMS7560S N-Channel PowerTrench SyncFETTM 25 V, 49 A, 1.45 m Features General Description The FDMS7560S has been designed to minimize losses in Max rDS(on) = 1.45 m at VGS = 10 V, ID = 30 A power conversion application. Advancements in both silicon and Max rDS(on) = 2.1 m at VGS = 4.5 V, ID = 26 A package technologies have been combined to offer the lowest

 8.1. Size:362K  fairchild semi
fdms7580.pdf pdf_icon

FDMS7560S

December 2009 FDMS7580 N-Channel Power Trench MOSFET 25 V, 7.5 m Features General Description Max rDS(on) = 7.5 m at VGS = 10 V, ID = 15 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 11.1 m at VGS = 4.5 V, ID = 12 A ringing of DC/DC converters using either synchronous or Advanced Pack

 8.2. Size:325K  fairchild semi
fdms7556s.pdf pdf_icon

FDMS7560S

September 2010 FDMS7556S N-Channel PowerTrench SyncFETTM 25 V, 49 A, 1.2 m Features General Description The FDMS7556S has been designed to minimize losses in Max rDS(on) = 1.2 m at VGS = 10 V, ID = 35 A power conversion application. Advancements in both silicon and Max rDS(on) = 1.65 m at VGS = 4.5 V, ID = 31 A package technologies have been combined to offer the lowest

 8.3. Size:349K  fairchild semi
fdms7572s.pdf pdf_icon

FDMS7560S

January 2010 FDMS7572S N-Channel PowerTrench SyncFETTM 25 V, 49 A, 2.9 m Features General Description The FDMS7572S has been designed to minimize losses in Max rDS(on) = 2.9 m at VGS = 10 V, ID = 23 A power conversion application. Advancements in both silicon and Max rDS(on) = 4.2 m at VGS = 4.5 V, ID = 18 A package technologies have been combined to offer the lowest

Otros transistores... STM8362, FDMS4435BZ, FDMS5352, FDMS5672, FDMS6673BZ, FDMS6681Z, FDMS7556S, FDMS7558S, SKD502T, FDMS7570S, FDMS7572S, FDMS7578, FDMS7580, FDMS7600AS, STM8360T, FDMS7602S, STM8358S