FDMS7560S Todos los transistores

 

FDMS7560S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDMS7560S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 89 W

Tensión drenaje-fuente (Vds): 25 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 49 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 3 V

Carga de compuerta (Qg): 66 nC

Resistencia drenaje-fuente RDS(on): 0.0015 Ohm

Empaquetado / Estuche: POWER56

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FDMS7560S Datasheet (PDF)

1.1. fdms7560s.pdf Size:253K _fairchild_semi

FDMS7560S
FDMS7560S

December 2009 FDMS7560S N-Channel PowerTrench SyncFETTM 25 V, 49 A, 1.45 m? Features General Description The FDMS7560S has been designed to minimize losses in Max rDS(on) = 1.45 m? at VGS = 10 V, ID = 30 A power conversion application. Advancements in both silicon and Max rDS(on) = 2.1 m? at VGS = 4.5 V, ID = 26 A package technologies have been combined to offer the lowest Advanc

4.1. fdms7572s.pdf Size:349K _fairchild_semi

FDMS7560S
FDMS7560S

January 2010 FDMS7572S N-Channel PowerTrench SyncFETTM 25 V, 49 A, 2.9 m? Features General Description The FDMS7572S has been designed to minimize losses in Max rDS(on) = 2.9 m? at VGS = 10 V, ID = 23 A power conversion application. Advancements in both silicon and Max rDS(on) = 4.2 m? at VGS = 4.5 V, ID = 18 A package technologies have been combined to offer the lowest Advanced

4.2. fdms7578.pdf Size:361K _fairchild_semi

FDMS7560S
FDMS7560S

December 2009 FDMS7578 N-Channel Power Trench MOSFET 25 V, 5.8 m? Features General Description Max rDS(on) = 5.8 m? at VGS = 10 V, ID = 17 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 8 m? at VGS = 4.5 V, ID = 14 A ringing of DC/DC converters using either synchronous or Advanced Package and Silic

 4.3. fdms7580.pdf Size:362K _fairchild_semi

FDMS7560S
FDMS7560S

December 2009 FDMS7580 N-Channel Power Trench MOSFET 25 V, 7.5 m? Features General Description Max rDS(on) = 7.5 m? at VGS = 10 V, ID = 15 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 11.1 m? at VGS = 4.5 V, ID = 12 A ringing of DC/DC converters using either synchronous or Advanced Package and Si

4.4. fdms7556s.pdf Size:325K _fairchild_semi

FDMS7560S
FDMS7560S

September 2010 FDMS7556S N-Channel PowerTrench SyncFETTM 25 V, 49 A, 1.2 m? Features General Description The FDMS7556S has been designed to minimize losses in Max rDS(on) = 1.2 m? at VGS = 10 V, ID = 35 A power conversion application. Advancements in both silicon and Max rDS(on) = 1.65 m? at VGS = 4.5 V, ID = 31 A package technologies have been combined to offer the lowest Advanc

 4.5. fdms7570s.pdf Size:341K _fairchild_semi

FDMS7560S
FDMS7560S

December 2009 FDMS7570S N-Channel PowerTrench SyncFETTM 25 V, 49 A, 1.95 m? Features General Description The FDMS7570S has been designed to minimize losses in Max rDS(on) = 1.95 m? at VGS = 10 V, ID = 28 A power conversion application. Advancements in both silicon and Max rDS(on) = 2.85 m? at VGS = 4.5 V, ID = 22 A package technologies have been combined to offer the lowest Advan

4.6. fdms7558s.pdf Size:334K _fairchild_semi

FDMS7560S
FDMS7560S

December 2009 FDMS7558S N-Channel PowerTrench SyncFETTM 25 V, 49 A, 1.25 m? Features General Description The FDMS7558S has been designed to minimize losses in Max rDS(on) = 1.25 m? at VGS = 10 V, ID = 32 A power conversion application. Advancements in both silicon and Max rDS(on) = 1.75 m? at VGS = 4.5 V, ID = 28 A package technologies have been combined to offer the lowest Advan

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