FDMS7560S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDMS7560S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 89 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 49 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0015 Ohm
Paquete / Cubierta: POWER56
Búsqueda de reemplazo de FDMS7560S MOSFET
FDMS7560S Datasheet (PDF)
fdms7560s.pdf

December 2009FDMS7560SN-Channel PowerTrench SyncFETTM 25 V, 49 A, 1.45 mFeatures General DescriptionThe FDMS7560S has been designed to minimize losses in Max rDS(on) = 1.45 m at VGS = 10 V, ID = 30 Apower conversion application. Advancements in both silicon and Max rDS(on) = 2.1 m at VGS = 4.5 V, ID = 26 Apackage technologies have been combined to offer the lowest
fdms7580.pdf

December 2009FDMS7580N-Channel Power Trench MOSFET 25 V, 7.5 mFeatures General Description Max rDS(on) = 7.5 m at VGS = 10 V, ID = 15 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 11.1 m at VGS = 4.5 V, ID = 12 Aringing of DC/DC converters using either synchronous or Advanced Pack
fdms7556s.pdf

September 2010FDMS7556SN-Channel PowerTrench SyncFETTM 25 V, 49 A, 1.2 mFeatures General DescriptionThe FDMS7556S has been designed to minimize losses in Max rDS(on) = 1.2 m at VGS = 10 V, ID = 35 Apower conversion application. Advancements in both silicon and Max rDS(on) = 1.65 m at VGS = 4.5 V, ID = 31 Apackage technologies have been combined to offer the lowest
fdms7572s.pdf

January 2010FDMS7572SN-Channel PowerTrench SyncFETTM 25 V, 49 A, 2.9 mFeatures General DescriptionThe FDMS7572S has been designed to minimize losses in Max rDS(on) = 2.9 m at VGS = 10 V, ID = 23 Apower conversion application. Advancements in both silicon and Max rDS(on) = 4.2 m at VGS = 4.5 V, ID = 18 Apackage technologies have been combined to offer the lowest
Otros transistores... STM8362 , FDMS4435BZ , FDMS5352 , FDMS5672 , FDMS6673BZ , FDMS6681Z , FDMS7556S , FDMS7558S , K2611 , FDMS7570S , FDMS7572S , FDMS7578 , FDMS7580 , FDMS7600AS , STM8360T , FDMS7602S , STM8358S .



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