ME2306S-G Todos los transistores

 

ME2306S-G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ME2306S-G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 12.6 nC
   trⓘ - Tiempo de subida: 10.2 nS
   Cossⓘ - Capacitancia de salida: 61.7 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.037 Ohm
   Paquete / Cubierta: SOT23
 

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ME2306S-G Datasheet (PDF)

 ..1. Size:1294K  matsuki electric
 me2306s me2306s-g.pdf pdf_icon

ME2306S-G

ME2306S/ME2306S-G N-Channel 30V(D-S) MOSFET GENERAL DESCRIPTION FEATURES FEATURES RDS(ON)37m@ VGS =10V The ME2306S is the N-Channel logic enhancement mode power RDS(ON)49m@VGS=4.5V field effect transistors, using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially tailor

 8.1. Size:1599K  matsuki electric
 me2306bs me2306bs-g.pdf pdf_icon

ME2306S-G

ME2306BS/ME2306BS-G N-Channel 30V (D-S)MOSFET GENERAL DESCRIPTION FEATURES The ME2306BS is the N-Channel logic enhancement mode power RDS(ON)38m@VGS=10V field effect transistor, using high cell density, DMOS trench RDS(ON)43m@VGS=4.5V technology. This high density process is especially tailored to RDS(ON)62m@VGS=2.5V minimize on-state resistance. These

 8.2. Size:879K  matsuki electric
 me2306n me2306n-g.pdf pdf_icon

ME2306S-G

ME2306N/ME2306N-G N-Channel 30V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME2306N is the N-Channel logic enhancement mode power RDS(ON)37m@VGS=10Vfield effect transistors, using high cell density, DMOS trench RDS(ON)49m@VGS=4.5Vtechnology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON)mi

 8.3. Size:730K  matsuki electric
 me2306an me2306an-g.pdf pdf_icon

ME2306S-G

Preliminary-ME2306AN/ME2306AN-G N-Channel 30V (D-S) MOSFETGENERAL DESCRIPTIONFEATURES The ME2306AN is the N-Channel logic enhancement mode power RDS(ON)37m@VGS=10Vfield effect transistors, using high cell density, DMOS trench RDS(ON)40m@VGS=4.5Vtechnology. This high density process is especially tailored to RDS(ON)53m@VGS=2.5Vminimize on-state r

MOSTRAR MÁS

Otros transistores... ME2306BS , ME2306BS-G , ME2306DS , ME2306DS-G , ME2306-G , ME2306N , ME2306N-G , ME2306S , IRFZ24N , ME2308D , ME2308D-G , ME2308DN-G , ME2312 , ME2312-G , ME2313 , ME2313-G , ME2320D2-G .

History: NP80N03DDE | IRLB8743 | IRL60HS118

 

 
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