ME2325S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: ME2325S
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 17.4 nC
   trⓘ - Tiempo de subida: 19.8 nS
   Cossⓘ - Capacitancia de salida: 91.7 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
   Paquete / Cubierta: SOT23

Búsqueda de reemplazo de MOSFET ME2325S

ME2325S Datasheet (PDF)

..1. Size:1293K matsuki electric
me2325s me2325s-g.pdf

ME2325S/ME2325S-G P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)50m@VGS=-10V The ME2325S is the P-Channel logic enhancement mode power field RDS(ON)76m@VGS=-4.5V effect transistors are produced using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially

8.1. Size:1062K matsuki electric
me2325 me2325-g.pdf

ME2325/ME2325-G P-Channel 30V (D-S) MOSFETMOSFETGENERAL DESCRIPTION FEATURES The ME2325 is the P-Channel logic enhancement mode power field RDS(ON)50m@VGS=-10Veffect transistors are produced using high cell density, DMOS trench RDS(ON)76m@VGS=-4.5Vtechnology. This high density process is especially tailored to Super high density cell design for extremely low

9.1. Size:1219K matsuki electric
me2323d me2323d-g.pdf

ME2323D/ME2323D-G P-Channel 20-V (D-S) MOSFETESD Protection GENERAL DESCRIPTION FEATURES The ME2323D(-G) is the P-Channel logic enhancement mode power RDS(ON) 50m@VGS=-4.5V field effect transistors are produced using high cell density, DMOS RDS(ON) 65m@VGS=-2.5V trench technology. This high density process is especially tailored to RDS(ON) 75m@VGS=-1.8

9.2. Size:1114K matsuki electric
me2328 me2328-g.pdf

ME2328/ME2328-G N - Channel 105-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)270m@VGS=10V The ME2328 is the N-Channel logic enhancement mode power field RDS(ON)340m@VGS=4.5V effect transistors are produced using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especiall

9.3. Size:1475K matsuki electric
me2320d me2320d-g.pdf

ME2320D/ME2320D-G N-Channel 20V (D-S) MOSFET , ESD Protection GENERAL DESCRIPTION FEATURES The ME2320D is the N-Channel logic enhancement mode power RDS(ON)=21m@VGS=4.5V field effect transistors are produced using high cell density, DMOS RDS(ON)=25 m@VGS=2.5V trench technology. This high density process is especially tailored to RDS(ON)=40 m@VGS=1.8V minimize on-st

9.4. Size:1144K matsuki electric
me2324d me2324d-g.pdf

ME2324D/ME2324D-G N-Channel 25V (D-S) MOSFET, ESD Protected GENERAL DESCRIPTION FEATURES The ME2324D is the N-Channel logic enhancement mode power RDS(ON)400m@VGS=4.5V field effect transistors are produced using high cell density , DMOS RDS(ON)450m@VGS=2.7V trench technology. This high density process is especially tailored to ESD Protection HBM >1KV minimize

9.5. Size:1162K matsuki electric
me2326a me2326a-g.pdf

ME2326A/ME2326A-G N - Channel 250-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)5.5@VGS=10V The ME2326A is the N-Channel logic enhancement mode power field RDS(ON)5.5@VGS=4.5V effect transistors are produced using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especial

9.6. Size:1436K matsuki electric
me2320ds me2320ds-g.pdf

Preliminary-ME2320DS/ME2320DS-G N-Channel 20V (D-S) MOSFET , ESD Protection GENERAL DESCRIPTION FEATURES The ME2320DS is the N-Channel logic enhancement mode power RDS(ON)=21m@VGS=4.5V field effect transistors are produced using high cell density, DMOS RDS(ON)=25 m@VGS=2.5V trench technology. This high density process is especially tailored to RDS(ON)=33 m@VGS=1.8V

9.7. Size:1932K matsuki electric
me2320d2-g me2320d2-g.pdf

ME2320D2-G/ME2320D2-G N-Channel 20V (D-S) MOSFET , ESD ProtectionGENERAL DESCRIPTION FEATURES The ME2320D2 is the N-Channel logic enhancement mode power RDS(ON)=21m@VGS=4.5Vfield effect transistors are produced using high cell density, DMOS RDS(ON)=25 m@VGS=2.5Vtrench technology. This high density process is especially tailored to RDS(ON)=40 m@VGS=1.8Vminimize on-s

9.8. Size:1736K cn vbsemi
me2323d.pdf

ME2323Dwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS

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