ME2606-G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

ME2606-G Datasheet (PDF)

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ME2606/ME2606-G N- Channel 200V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2606 is the N-Channel logic enhancement mode power field RDS(ON)420m@VGS=10V effect transistors are produced using high cell density DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially tailored to Exceptional on-resistan

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ME2604/ME2604-GN - Channel 250-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)1.7@VGS=10V The ME2604 is the N-Channel logic enhancement mode power field RDS(ON)1.9@VGS=4.5V effect transistors are produced using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially t

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ME2602/ME2602-G N-Channel 100V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)100m@VGS=10V The ME2602 is the N-Channel logic enhancement mode power field RDS(ON)115m@VGS=4.5V effect transistors are produced using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially ta

Otros transistores... ME2325S-G , ME2345AS , ME2345AS-G , ME2355AN , ME2355AN-G , ME25N15AL , ME25N15AL-G , ME2606 , RU6888R , ME2614 , ME2614-G , ME2620-G , ME3205F , ME3205F-G , ME3205H-G , ME3424D , ME3424D-G .