FDMS7580 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDMS7580
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 27 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0075 Ohm
Paquete / Cubierta: POWER56

Búsqueda de reemplazo de MOSFET FDMS7580

FDMS7580 Datasheet (PDF)

..1. Size:362K fairchild semi
fdms7580.pdf

December 2009FDMS7580N-Channel Power Trench MOSFET 25 V, 7.5 mFeatures General Description Max rDS(on) = 7.5 m at VGS = 10 V, ID = 15 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 11.1 m at VGS = 4.5 V, ID = 12 Aringing of DC/DC converters using either synchronous or Advanced Pack

8.1. Size:325K fairchild semi
fdms7556s.pdf

September 2010FDMS7556SN-Channel PowerTrench SyncFETTM 25 V, 49 A, 1.2 mFeatures General DescriptionThe FDMS7556S has been designed to minimize losses in Max rDS(on) = 1.2 m at VGS = 10 V, ID = 35 Apower conversion application. Advancements in both silicon and Max rDS(on) = 1.65 m at VGS = 4.5 V, ID = 31 Apackage technologies have been combined to offer the lowest

8.2. Size:253K fairchild semi
fdms7560s.pdf

December 2009FDMS7560SN-Channel PowerTrench SyncFETTM 25 V, 49 A, 1.45 mFeatures General DescriptionThe FDMS7560S has been designed to minimize losses in Max rDS(on) = 1.45 m at VGS = 10 V, ID = 30 Apower conversion application. Advancements in both silicon and Max rDS(on) = 2.1 m at VGS = 4.5 V, ID = 26 Apackage technologies have been combined to offer the lowest

8.3. Size:349K fairchild semi
fdms7572s.pdf

January 2010FDMS7572SN-Channel PowerTrench SyncFETTM 25 V, 49 A, 2.9 mFeatures General DescriptionThe FDMS7572S has been designed to minimize losses in Max rDS(on) = 2.9 m at VGS = 10 V, ID = 23 Apower conversion application. Advancements in both silicon and Max rDS(on) = 4.2 m at VGS = 4.5 V, ID = 18 Apackage technologies have been combined to offer the lowest

8.4. Size:361K fairchild semi
fdms7578.pdf

December 2009FDMS7578N-Channel Power Trench MOSFET 25 V, 5.8 mFeatures General Description Max rDS(on) = 5.8 m at VGS = 10 V, ID = 17 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 8 m at VGS = 4.5 V, ID = 14 Aringing of DC/DC converters using either synchronous or Advanced Package

8.5. Size:341K fairchild semi
fdms7570s.pdf

December 2009FDMS7570SN-Channel PowerTrench SyncFETTM 25 V, 49 A, 1.95 mFeatures General DescriptionThe FDMS7570S has been designed to minimize losses in Max rDS(on) = 1.95 m at VGS = 10 V, ID = 28 Apower conversion application. Advancements in both silicon and Max rDS(on) = 2.85 m at VGS = 4.5 V, ID = 22 Apackage technologies have been combined to offer the lowes

8.6. Size:334K fairchild semi
fdms7558s.pdf

December 2009FDMS7558SN-Channel PowerTrench SyncFETTM 25 V, 49 A, 1.25 mFeatures General DescriptionThe FDMS7558S has been designed to minimize losses in Max rDS(on) = 1.25 m at VGS = 10 V, ID = 32 Apower conversion application. Advancements in both silicon and Max rDS(on) = 1.75 m at VGS = 4.5 V, ID = 28 Apackage technologies have been combined to offer the lowes

8.7. Size:535K onsemi
fdms7572s.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

8.8. Size:431K onsemi
fdms7570s.pdf