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2SK2705 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK2705

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 75 W

Tensión drenaje-fuente (Vds): 450 V

Corriente continua de drenaje (Id): 13 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Conductancia de drenaje-sustrato (Cd): 1300 pF

Resistencia drenaje-fuente RDS(on): 0.57 Ohm

Empaquetado / Estuche: FM100

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2SK2705 Datasheet (PDF)

4.1. 2sk2700.pdf Size:388K _toshiba

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2SK2705

2SK2700 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?MOSIII) 2SK2700 Chopper Regulator, DCDC Converter and Motor Drive Applications Unit: mm Low drainsource ON resistance : RDS = 3.7 ? (typ.) (ON) High forward transfer admittance : |Y | = 2.6 S (typ.) fs Low leakage current : I = 100 A (max) (V = 720 V) DSS DS Enhancementmode : Vth = 2.0~4.0 V (V =

4.2. 2sk2701a.pdf Size:206K _sanken-ele

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2-2 MOS FETs Specifications List by Part Number Absolute Maximum Ratings IGSS IDSS VTH VDSS VGSS ID ID (pulse) PD Part EAS Conditions Conditions Conditions Number (nA) VGS (A) VDS (V) VDS ID (mJ) (V) (V) (A) (A) (W) max (V) min max (V) min max (V) ( A) 2SK2420 60 20 30 120 40 38 100 20 100 60 2.0 4.0 10 250 2SK2701A 450 30 7 28 35 130 100 30 100 450 2.0 4.0 10 1m 2SK2

5.1. 2sk2726.pdf Size:209K _update

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2SK2705

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

5.2. 2sk2727.pdf Size:209K _update

2SK2705
2SK2705

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

5.3. 2sk2725.pdf Size:209K _update

2SK2705
2SK2705

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

5.4. 2sk2730.pdf Size:210K _update

2SK2705
2SK2705

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

5.5. 2sk2715tl.pdf Size:145K _update

2SK2705
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Transistors Switching (500V, 2A) 2SK2715 FFeatures FExternal dimensions (Units: mm) 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaran- teed to be ±30V. 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FPackaging specificati

5.6. 2sk2770-01.pdf Size:129K _update

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FUJI POWER MOSFET 2SK2770-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings FAP-2S Series TO-3P Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators 3. Source UPS (Uninterruptible Power Supply) JEDEC DC-DC converters EIAJ SC-65 Maximum ratings and characteristicAbsolute maximum ratings Equi

5.7. 2sk2729.pdf Size:209K _update

2SK2705
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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

5.8. 2sk277 2sk278.pdf Size:36K _upd

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5.9. 2sk2746.pdf Size:420K _toshiba

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2SK2746 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIII) 2SK2746 DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 1.3 ? (typ.) (ON) High forward transfer admittance : |Y | = 5.0 S (typ.) fs Low leakage current : I = 100 A (max) (V = 640 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10 V, I = 1 mA) D

5.10. 2sk2777.pdf Size:425K _toshiba

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2SK2777 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?--MOSV) 2SK2777 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 0.9 ? (typ.) High forward transfer admittance : |Y | = 5.5 S (typ.) fs Low leakage current : I = 100 A (max) (V = 600 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10

5.11. 2sk2719.pdf Size:325K _toshiba

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5.12. 2sk2733.pdf Size:413K _toshiba

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2SK2733 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIII) 2SK2733 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 8.0 ? (typ.) (ON) High forward transfer admittance : |Y | = 0.9 S (typ.) fs Low leakage current : I = 100 A (max) (V = 720 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V =

5.13. 2sk2782.pdf Size:418K _toshiba

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2SK2782 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L -?-MOSV) 2SK2782 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain-source ON resistance : R = 0.039 ? (typ.) DS (ON) High forward transfer admittance : |Y | = 11 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 60 V) DS Enhancement-mode

5.14. 2sk2745.pdf Size:399K _toshiba

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2SK2745 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L -?-MOSV) 2SK2745 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 7.0 m? (typ.) DS (ON) High forward transfer admittance : |Y | = 50 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 50 V) DS Enhancement-mode

5.15. 2sk2789.pdf Size:428K _toshiba

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2SK2789 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L -?-MOSV) 2SK2789 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain-source ON resistance : R = 66 m? (typ.) DS (ON) High forward transfer admittance : |Y | = 16 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 100 V) DS Enhancement-mode :

5.16. 2sk2741.pdf Size:414K _toshiba

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2SK2741 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L -?-MOSV) 2SK2741 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 0.12 ? (typ.) DS (ON) High forward transfer admittance : |Y | = 5.0 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 60 V) DS Enhancement-mod

5.17. 2sk2749.pdf Size:412K _toshiba

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2SK2749 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIII) 2SK2749 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 1.6 ? (typ.) (ON) High forward transfer admittance : |Y | = 5.0 S (typ.) fs Low leakage current : I = 100 A (max) (V = 720 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V =

5.18. 2sk2742.pdf Size:418K _toshiba

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2SK2742 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L -?-MOSV) 2SK2742 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 0.28 ? (typ.) DS (ON) High forward transfer admittance : |Y | = 3.5 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 100 V) DS Enhancement-mo

5.19. 2sk2744.pdf Size:177K _toshiba

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5.20. 2sk2717.pdf Size:409K _toshiba

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2SK2717 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIII) 2SK2717 DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 2.3 ? (typ.) (ON) High forward transfer admittance : |Y | = 4.4 S (typ.) fs Low leakage current : I = 100 A (max) (V = 720 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10 V, I = 1 mA) D

5.21. 2sk2750.pdf Size:393K _toshiba

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2SK2750 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK2750 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 1.7 ? (typ.) (ON) High forward transfer admittance : |Y | = 3.0 S (typ.) fs Low leakage current : I = 100 A (max) (V = 600 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10

5.22. 2sk2718.pdf Size:411K _toshiba

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2SK2718 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIII) 2SK2718 DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 5.6 ? (typ.) (ON) High forward transfer admittance : |Y | = 2.0 S (typ.) fs Low leakage current : I = 100 A (max) (V = 720 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10 V, I = 1 mA) D

5.23. 2sk2776.pdf Size:444K _toshiba

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2SK2776 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK2776 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications Low drain-source ON-resistance : RDS (ON) = 0.75 ? (typ.) High forward transfer admittance : |Yfs| = 7.0 S (typ.) Low leakage current : IDSS = 100 ?A (max) (VDS = 500 V) Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10

5.24. 2sk2791.pdf Size:43K _sanyo

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Ordering number:ENN6437 N-Channel Silicon MOSFET 2SK2791 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2083B 4V drive. [2SK2791] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 : Gate 2 : Drain 1 2 3 3 : Source 4 : Drain 2.3 2.3 SANYO : TP 2092B [2SK2791] 6.5 2.3 5.0 0.5 4 0.5 0.85 1 2 3

5.25. 2sk2775.pdf Size:40K _sanyo

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Ordering number:ENN6392 N-Channel Silicon MOSFET 2SK2775 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2128 4V drive. [2SK2775] Enables simplified fabrication, high-density mount- 8.2 ing, and miniaturization in end products due to the 7.8 6.2 0.6 surface mountable package. 3 1 2 0.3 1.0 1.0

5.26. 2sk2735.pdf Size:90K _renesas

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2SK2735(L), 2SK2735(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1029-0200 (Previous: ADE-208-543) Rev.2.00 Sep 07, 2005 Features Low on-resistance RDS = 20 m? typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004ZD-B RENESAS Package code: PRSS0004ZD-C (Package name: DPAK(L)-(2)) (Packa

5.27. 2sk2788.pdf Size:78K _renesas

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2SK2788 Silicon N Channel MOS FET High Speed Power Switching REJ03G1033-0200 (Previous: ADE-208-538) Rev.2.00 Sep.07,2005 Features Low on-resistance RDS(on) = 0.12 ? typ (VGS = 10 V, ID = 1 A) Low drive current High speed switching 4 V gate drive devices. Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R ) D 1 2 1. Gate 3 2. Drain G 3. Sou

5.28. 2sk2796.pdf Size:76K _renesas

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To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (

5.29. 2sk2737.pdf Size:89K _renesas

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2SK2737 Silicon N Channel MOS FET High Speed Power Switching REJ03G1031-0400 (Previous: ADE-208-533B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 10 m? typ. 4 V gate drive devices. High speed switching Outline RENESAS Package code: PRSS0003AE-A (Package name: TO-220CFM) D G 1. Gate 2. Drain 3. Source 1 2 3 S Rev.4.00 Sep 07, 2005 page 1 of 6

5.30. rej03g1029 2sk2735lsds.pdf Size:103K _renesas

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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.31. r07ds0511ej 2sk2788.pdf Size:76K _renesas

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Preliminary Datasheet 2SK2788 R07DS0511EJ0300 (Previous: REJ03G1033-0200) Silicon N Channel MOS FET Rev.3.00 High Speed Power Switching Jul 27, 2011 Features ? Low on-resistance RDS(on) = 0.12 ? typ (VGS = 10 V, ID = 1 A) ? Low drive current ? High speed switching ? 4 V gate drive devices. Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK) D 1 2 1. Gate

5.32. 2sk2736.pdf Size:88K _renesas

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2SK2736 Silicon N Channel MOS FET High Speed Power Switching REJ03G1030-0200 (Previous: ADE-208-544) Rev.2.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 20 m? typ. (VGS = 10 V, ID = 15 A) 4 V gate drive devices. High speed switching Outline RENESAS Package code: PRSS0003AE-A (Package name: TO-220CFM) D G 1. Gate 2. Drain 3. Source 1 2 3 S Rev.2.00 S

5.33. rej03g1034 2sk2796lsds.pdf Size:109K _renesas

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2SK2705

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.34. 2sk2738.pdf Size:94K _renesas

2SK2705
2SK2705

2SK2738 Silicon N Channel MOS FET High Speed Power Switching REJ03G1032-0200 (Previous: ADE-208-483) Rev.2.00 Sep 07, 2005 Features Low on-resistance RDS = 15 m? typ High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AE-A (Package name: TO-220CFM) D G 1. Gate 2. Drain 3. Source 1 2 3 S Rev.2.00 Se

5.35. 2sk2713 1-5.pdf Size:137K _rohm

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5.36. 2sk2793.pdf Size:141K _rohm

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Transistors Switching (500V, 5A) 2SK2793 FFeatures FExternal dimensions (Units: mm) 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaran- teed to be 30V. 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications 162

5.37. 2sk2711.pdf Size:139K _rohm

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Transistors Switching (250V, 16A) 2SK2711 FFeatures FExternal dimensions (Units: mm) 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaran- teed to be 30V. 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications

5.38. 2sk2715 1-5.pdf Size:133K _rohm

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5.39. 2sk2714 1-5.pdf Size:137K _rohm

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5.40. 2sk2731 1-5.pdf Size:116K _rohm

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5.41. 2sk2793 1-5.pdf Size:137K _rohm

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5.42. 2sk2792 1-5.pdf Size:136K _rohm

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5.43. 2sk2740 1-5.pdf Size:138K _rohm

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5.44. 2sk2714.pdf Size:144K _rohm

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Transistors Switching (500V, 10A) 2SK2714 FFeatures FExternal dimensions (Units: mm) 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaran- teed to be 30V. 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications 138

5.45. 2sk2713.pdf Size:143K _rohm

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Transistors Switching (450V, 5A) 2SK2713 FFeatures FExternal dimensions (Units: mm) 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaran- teed to be 30V. 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications 134

5.46. 2sk2731.pdf Size:112K _rohm

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Transistors Interface and switching (30V, 200mA) 2SK2731 FFeatures FExternal dimensions (Units: mm) 1) Low on-resistance. 2) Fast switching speed. 3) Low-voltage drive (4V). 4) Easily designed drive circuits. 5) Easy to parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FEquivalent circuit 146 Transistors 2SK2731 FElectrical characteristics (Ta = 2

5.47. 2sk2739.pdf Size:145K _rohm

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Transistors Switching (300V, 16A) 2SK2739 FFeatures FExternal dimensions (Units: mm) 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaran- teed to be 30V. 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications

5.48. 2sk2740.pdf Size:143K _rohm

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Transistors Switching (600V, 7A) 2SK2740 FFeatures FExternal dimensions (Units: mm) 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaran- teed to be 30V. 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications 154

5.49. 2sk2715.pdf Size:138K _rohm

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Transistors Switching (500V, 2A) 2SK2715 FFeatures FExternal dimensions (Units: mm) 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaran- teed to be 30V. 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications

5.50. 2sk2739 1-5.pdf Size:139K _rohm

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5.51. 2sk2792.pdf Size:140K _rohm

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Transistors Switching (600V, 4A) 2SK2792 FFeatures FExternal dimensions (Units: mm) 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaran- teed to be 30V. 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications 158

5.52. 2sk2711 1-5.pdf Size:134K _rohm

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5.53. 2sk2797.pdf Size:23K _panasonic

2SK2705

Power F-MOS FETs 2SK2797 2SK2797(Tentative) Silicon N-Channel MOS Unit : mm For high-speed switching 6.5 0.1 For high-frequency power amplification 5.3 0.1 4.35 0.1 3.0 0.1 Features Avalanche energy capability guaranteed : EAS > 10mJ High-speed switching : tf=15ns No secondary breakdown 1.0 0.1 0.85 0.1 0.75 0.1 0.5 0.1 4.6 0.1 0.05 to 0.15 Absolute Maximum Ratings (

5.54. 2sk2772.pdf Size:23K _panasonic

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Power F-MOS FETs 2SK2772 2SK2772(Tentative) Silicon N-Channel MOS Unit : mm For high-speed switching 6.5 0.1 5.3 0.1 4.35 0.1 Features 3.0 0.1 High-speed switching High drain-source voltage (VDSS) 1.0 0.1 0.85 0.1 0.75 0.1 0.5 0.1 4.6 0.1 0.05 to 0.15 Absolute Maximum Ratings (Ta = 25?C) 1 : Gate 1 2 3 2 : Drain Parameter Symbol Rating Unit Marking 3 : Source Dra

5.55. 2sk2790.pdf Size:21K _panasonic

2SK2705

Power F-MOS FETs 2SK758 2SK2790(Tentative) Silicon N-Channel Power F-MOS Unit : mm Features Low ON-resistance RDS(on) 8.5 0.2 3.4 0.3 6.0 0.5 1.0 0.1 High-speed switching No secondary breakdown Applications 1.5max. 1.1max. High-speed switching Motor drive 0.8 0.1 0.5max. 2.54 0.3 5.08 0.5 1 2 3 Absolute Maximum Ratings (Tc = 25?C) 1 : Gate Parameter Symbol Rating

5.56. 2sk2751.pdf Size:21K _panasonic

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Silicon Junction FETs (Small Signal) 2SK2751 2SK2751 Silicon N-Channel Junction Unit : mm For impedance conversion in low frequency +0.2 2.8 0.3 For pyro-electric sensor +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features 1 Low noise-figure (NF) High gate-drain voltage VGDO 3 Downsizing of sets by mini-type package and automatic insertion by 2 taping/magazine packing are available.

5.57. 2sk2751.pdf Size:179K _utc

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UNISONIC TECHNOLOGIES CO., LTD 2SK2751 N-CHANNEL JFET N-CHANNEL JUNCTION FET FEATURES * Low noise-figure (NF). * High gate to drain voltage VGDO. APPLICATIONS * For impedance conversion in low frequency. * For pyroelectric sensor. *Pb-free plating product number:2SK2751L ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Plating 1 2 3

5.58. 2sk2756-01r.pdf Size:61K _fuji

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FUJI POWER MOSFET 2SK2756-01R N-CHANNEL SILICON POWER MOSFET Outline Drawings FAP-2S Series 5.5±0.3 ±0.3 ±0.2 15.5 ø3.2 3.2+0.3 Features High speed switching Low on-resistance No secondary breadown Low driving power ±0.3 2.1±0.3 1.6 Avalanche-proof +0.2 1.1—0.1 ±0.2 3.5 ±0.2 +0.2 ±0.2 5.45 5.45 0.6 Applications Switching regulators 1. Gate 2. Drain UPS

5.59. 2sk2764-01r.pdf Size:61K _fuji

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FUJI POWER MOSFET 2SK2764-01R N-CHANNEL SILICON POWER MOSFET Outline Drawings FAP-2S Series 5.5±0.3 ±0.3 ±0.2 15.5 ø3.2 3.2+0.3 Features High speed switching Low on-resistance No secondary breadown Low driving power ±0.3 2.1±0.3 1.6 Avalanche-proof +0.2 1.1—0.1 ±0.2 3.5 ±0.2 +0.2 ±0.2 5.45 5.45 0.6 Applications Switching regulators 1. Gate 2. Drain UPS

5.60. 2sk2767-01.pdf Size:28K _fuji

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N-channel MOS-FET 2SK2767-01 FAP-IIS Series 900V 5,5Ω 3,5A 80W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Repetitive Avalanche Rated > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteris

5.61. 2sk2761-01mr.pdf Size:86K _fuji

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FUJI POWER MOSFET 2SK2761-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings FAP-2S Series TO-220F15 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof 2.54 Applications Switching regulators 3. Source UPS (Uninterruptible Power Supply) JEDEC DC-DC converters SC-67 EIAJ Maximum ratings and characteristicAbsolute maximum ra

5.62. 2sk2771-01r.pdf Size:199K _fuji

2SK2705
2SK2705

5.63. 2sk2759-01r.pdf Size:62K _fuji

2SK2705
2SK2705

FUJI POWER MOSFET 2SK2759-01R N-CHANNEL SILICON POWER MOSFET Outline Drawings FAP-2S Series 5.5±0.3 ±0.3 ±0.2 15.5 ø3.2 3.2+0.3 Features High speed switching Low on-resistance No secondary breadown Low driving power ±0.3 2.1±0.3 1.6 Avalanche-proof +0.2 1.1—0.1 ±0.2 3.5 ±0.2 +0.2 ±0.2 5.45 5.45 0.6 Applications Switching regulators 1. Gate 2. Drain UPS

5.64. 2sk2769-01mr.pdf Size:133K _fuji

2SK2705
2SK2705

FUJI POWER MOSFET 2SK2769-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings FAP-2S Series TO-220F15 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof 2.54 Applications Switching regulators 3. Source UPS (Uninterruptible Power Supply) JEDEC DC-DC converters SC-67 EIAJ Maximum ratings and characteristicAbsolute maximum

5.65. 2sk2760-01.pdf Size:291K _fuji

2SK2705
2SK2705

N-channel MOS-FET 2SK2760-01 FAP-IIS Series 600V 1,2Ω 9A 60W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Repetitive Avalanche Rated > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristi

5.66. 2sk2755-01.pdf Size:274K _fuji

2SK2705
2SK2705

N-channel MOS-FET 2SK2755-01 FAP-IIS Series 450V 0,45Ω 18A 125W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Repetitive Avalanche Rated > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteri

5.67. 2sk2766-01r.pdf Size:449K _fuji

2SK2705
2SK2705



5.68. 2sk2765-01.pdf Size:77K _fuji

2SK2705
2SK2705

FUJI POWER MOSFET 2SK2765-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings FAP-2S Series TO-3P Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators 3. Source UPS (Uninterruptible Power Supply) JEDEC DC-DC converters EIAJ SC-65 Maximum ratings and characteristicAbsolute maximum ratings Equival

5.69. 2sk2728.pdf Size:52K _hitachi

2SK2705
2SK2705

2SK2728 Silicon N Channel MOS FET High Speed Power Switching ADE-208-454 B 3rd. Edition Features • Low on-resistance • High speed switching • Low drive current • Avalanche ratings Outline TO–3P D G 1. Gate 2. Drain 1 2 (Flange) 3 3. Source S 2SK2728 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 500 V Gate to sour

5.70. 2sk2795.pdf Size:43K _hitachi

2SK2705
2SK2705

2SK2795 Silicon N Channel MOS FET UHF Power Amplifier ADE-208-466 A (Z) 2nd. Edition November. 1996 Features • High power output, High gain, High effeciency PG = 11dB, Pout = 24dBm, ? D = 40 %min. (f = 836.5MHz) • Compact package capable of surface mounting Outline UPAK 1 2 3 4 1. Gate 2. Source 3. Drain 4. Source This Device is sensitive to Electro Static Discharge. An A

5.71. 2sk2731-3.pdf Size:1023K _kexin

2SK2705
2SK2705

SMD Type MOSFET N-Channel MOSFET 2SK2731 SOT-23-3 Unit: mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● VDS (V) = 30V 1 2 ● ID = 0.2 A +0.02 +0.1 0.15 -0.02 0.95 -0.1 ● RDS(ON) < 2.8Ω (VGS = 10V) +0.1 1.9 -0.2 ● RDS(ON) < 4.5Ω (VGS = 4V) 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Volta

5.72. 2sk2731.pdf Size:1015K _kexin

2SK2705
2SK2705

SMD Type MOSFET N-Channel MOSFET 2SK2731 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● VDS (V) = 30V 1 2 ● ID = 0.2 A +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 ● RDS(ON) < 2.8Ω (VGS = 10V) ● RDS(ON) < 4.5Ω (VGS = 4V) 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VD

Otros transistores... 2SK2553 , 2SK2554 , 2SK2586 , 2SK2684 , 2SK2701 , 2SK2702 , 2SK2703 , 2SK2704 , BUZ11 , 2SK2706 , 2SK2707 , 2SK2708 , 2SK2709 , 2SK2710 , 2SK2723 , 2SK2724 , 2SK2734 .

 


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