ME6600D-G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: ME6600D-G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.89 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.4 V
   Qgⓘ - Carga de la puerta: 33.4 nC
   trⓘ - Tiempo de subida: 1190 nS
   Cossⓘ - Capacitancia de salida: 413 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0057 Ohm
   Paquete / Cubierta: DFN2X3

Búsqueda de reemplazo de MOSFET ME6600D-G

ME6600D-G Datasheet (PDF)

..1. Size:1036K matsuki electric
me6600d-g.pdf

ME6600D-G Dual N-Channel 12V(S-S) MOSFET GENERAL DESCRIPTION FEATURES The ME6600D-G is the N-Channel logic enhancement mode power RSS(ON) 5.7 m@VGS=4.5Vfield effect transistors are produced using high cell density, DMOS RSS(ON) 6.3 m@VGS=3.8Vtrench technology. This high density process is especially tailored to RSS(ON) 8.3 m@VGS=3.1Vminimize on-state re

9.1. Size:1164K matsuki electric
me6606d-g.pdf

ME6606D-G N-Channel 12V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME6606D-G is the N-Channel logic enhancement mode power RDS(ON)1.25 m@VGS=4.5Vfield effect transistors are produced using high cell density , DMOS RDS(ON)1.43 m @VGS=3.8Vtrench technology. This high density process is especially tailored to RDS(ON)1.8 m @VGS=3.1Vminimize on-state resist

9.2. Size:427K matsuki electric
me6602d-g.pdf

ME6602D-G Dual N-Channel 12V(S-S) MOSFET GENERAL DESCRIPTION FEATURES The ME6602D-G is the N-Channel logic enhancement mode power RSS(ON) 3.35 m@VGS=4.5Vfield effect transistors are produced using high cell density, DMOS RSS(ON) 3.6 m@VGS=3.8Vtrench technology. This high density process is especially tailored to RSS(ON) 4.3 m@VGS=3.1Vminimize on-state r

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IRF3000PBF

Liste

Recientemente añadidas las descripciónes de los transistores: