ME7632-G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ME7632-G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 37.8 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 113 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 58.3 nS
Cossⓘ - Capacitancia de salida: 583 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.00185 Ohm
Encapsulados: POWERDFN5X6
Búsqueda de reemplazo de ME7632-G MOSFET
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ME7632-G datasheet
me7632 me7632-g.pdf
Preliminary-ME7632/ME7632-G N-Channel 30V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME7632 is the N-Channel logic enhancement mode power field RDS(ON) 1.85 m @VGS=10V effect transistors are produced using high cell density , DMOS trench RDS(ON) 3.6 m @VGS=4.5V technology. This high density process is especially tailored to Super high density cell design f
me7632s me7632s-g.pdf
ME7632S/ME7632S-G N-Channel 30V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME7632S is the N-Channel logic enhancement mode power RDS(ON) 1.85 m @VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON) 3.6 m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extre
me7636 me7636-g.pdf
ME7636/ME7636-G N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 2.5m @VGS=10V The ME7636 is the N-Channel logic enhancement mode power field RDS(ON) 3.3m @VGS=4.5V effect transistors are produced using high cell density , DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is esp
Otros transistores... ME7442D-G, ME75N03, ME75N03-G, ME7607, ME7607-G, ME7620, ME7620-G, ME7632, 4N60, ME7632S, ME7632S-G, ME7636, ME7636-G, ME7640, ME7640-G, ME7642, ME7642-G
History: ME7632 | AP92T12GP-HF
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