ME7648 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ME7648

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 37.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 94 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 27 nS

Cossⓘ - Capacitancia de salida: 424 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0027 Ohm

Encapsulados: POWERDFN5X6

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ME7648 datasheet

 ..1. Size:1657K  matsuki electric
 me7648 me7648-g.pdf pdf_icon

ME7648

Preliminary-ME7648/ME7648-G N-Channel 40V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME7648 is the N-Channel logic enhancement mode power field RDS(ON) 2.7 m @VGS=10V effect transistors are produced using high cell density , DMOS trench RDS (ON) 8.8 m @VGS=4.5V technology. This high density process is especially tailored to Super high density cell design f

 0.1. Size:870K  matsuki electric
 me7648s me7648s-g.pdf pdf_icon

ME7648

ME7648S/ME7648S-G N-Channel 40V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME7648S is the N-Channel logic enhancement mode power RDS(ON) 3.1m @VGS=10V field effect transistors are produced using high cell density , DMOS RDS (ON) 5.5 m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extrem

 9.1. Size:2202K  matsuki electric
 me7644 me7644-g.pdf pdf_icon

ME7648

ME7644/ME7644-G N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME7644 is the N-Channel logic enhancement mode power field RDS(ON) 0.96m @VGS=10V effect transistors are produced using high cell density , DMOS trench RDS(ON) 1.98m @VGS=4.5V technology. This high density process is especially tailored to Super high density cell design for extremel

 9.2. Size:1008K  matsuki electric
 me7642 me7642-g.pdf pdf_icon

ME7648

ME7642/ME7642-G N-Channel 40V(D-S) Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME7642-G is the N-Channel logic enhancement mode power RDS(ON) 4m @VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON) 5.5m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extreme

MOSTRAR MÁS

Otros transistores... ME7636, ME7636-G, ME7640, ME7640-G, ME7642, ME7642-G, ME7644, ME7644-G, IRF520, ME7648-G, ME7648S, ME7648S-G, ME7686, ME7686-G, ME7705, ME7705-G, ME7707