ME9435AS-G Todos los transistores

 ..1. Size:1229K  matsuki electric
 me9435as me9435as-g.pdf

ME9435AS/ ME9435AS-G P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 45m @VGS=-10V The ME9435AS is the P-Channel logic enhancement mode power RDS(ON) 60m @VGS=-4.5V field effect transistors, using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially tailored t

 7.1. Size:1289K  matsuki electric
 me9435a me9435a-g.pdf

ME9435A/ME9435A-G P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 40m @VGS=-10V The ME9435A is the P-Channel logic enhancement mode power field RDS(ON) 60m @VGS=-4.5V effect transistors, using high cell density, DMOS trench technology. Super high density cell design for extremely low RDS(ON) This high density process is especially tailored to m

 8.1. Size:1173K  matsuki electric
 me9435 me9435-g.pdf

ME9435/ ME9435-G P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 60m @VGS=-10V The ME9435 is the P-Channel logic enhancement mode power field RDS(ON) 90m @VGS=-4.5V effect transistors, using high cell density, DMOS trench technology. Super high density cell design for extremely low RDS(ON) This high density process is especially tailored to mini

 8.2. Size:838K  cn vbsemi
 me9435.pdf

ME9435 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET 0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC 0.060 at VGS = - 4.5 V - 4.4 S SO-8 G SD 1 8 S D 2 7 3 6 SD G D 4 5 D Top Vi