STM8319 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: STM8319
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 4 nC
   Cossⓘ - Capacitancia de salida: 215 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm
   Paquete / Cubierta: SOP8

Búsqueda de reemplazo de MOSFET STM8319

STM8319 Datasheet (PDF)

..1. Size:277K samhop
stm8319.pdf

GreenProductSTM8319aS mHop Microelectronics C orp.Ver 1.0Dual Enhancement Mode Field Effect Transistor ( N and P Channel )PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel)RDS(ON) (m) Max RDS(ON) (m) MaxVDSS ID VDSS ID25 @ VGS=10V 35 @ VGS=-10V30V 7A -30V -6A30 @ VGS=4.5V 52 @ VGS=-4.5VD2 5 4 G 26 3D2 S 2D1 7 2G 1S O-8D1 8 1S 11(TA=25C un

..2. Size:1025K cn vbsemi
stm8319.pdf

STM8319www.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 at VGS

9.1. Size:276K samhop
stm8324.pdf

GreenProductSTM8324aS mHop Microelectronics C orp.Ver 1.0Dual Enhancement Mode Field Effect Transistor ( N and P Channel )PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel)RDS(ON) (m) Max RDS(ON) (m) MaxVDSS ID VDSS ID31 @ VGS=10V 35 @ VGS=-10V30V 6.5A -30V -6A42 @ VGS=4.5V 53 @ VGS=-4.5V5 4D2 G 26 3D2 S 2D1 7 2G 1S O-8D1 8 1S 11(TA=25C

9.2. Size:206K samhop
stm8309.pdf

GreenProductSTM8309SamHop Microelectronics Corp.Oct.13, 2006Dual Enhancement Mode Field Effect Transistor ( N and P Channel)PRODUCT SUMMARY (N-Channel) (P-Channel)PRODUCT SUMMARYVDSS ID RDS(ON) ( m ) Max VDSS ID RDS(ON) ( m ) Max23 @ VGS = 10V 35 @ VGS = -10V-30V -6A30V7A30 @ VGS = 4.5V 52 @ VGS = -4.5VD1 D1 D2 D28 7 6 5SO-811 2 3 4S1 G1 S2 G2ABSO

9.3. Size:278K samhop
stm8360t.pdf

GreenProductSTM8360TaS mHop Microelectronics C orp.Ver 1.0Dual Enhancement Mode Field Effect Transistor (N and P Channel)PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel)RDS(ON) (m) Max RDS(ON) (m) MaxVDSS ID VDSS ID29 @ VGS=10V 42 @ VGS=-10V40V 6.6A-40V -5.5A45 @ VGS=4.5V 65 @ VGS=-4.5VD2 5 4 G 2D2 6 3 S 2D1 7 2G 1S O-8D1 8 1S 11(TC=25C

9.4. Size:154K samhop
stm8362.pdf

GreenProductSTM8362aS mHop Microelectronics C orp.Ver 1.1Dual Enhancement Mode Field Effect Transistor (N and P Channel)PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel)RDS(ON) (m) Max RDS(ON) (m) MaxVDSS ID VDSS ID29 @ VGS=10V 38 @ VGS=-10V40V 6.6A-40V -5.8A45 @ VGS=4.5V 60 @ VGS=-4.5VD2 5 4 G 26D2 3 S 2D1 7 2G 1SO-8D1 8 1S 11(TC=25C un

9.5. Size:277K samhop
stm8300.pdf

GreenProductSTM8300aS mHop Microelectronics C orp.Ver 1.0Dual Enhancement Mode Field Effect Transistor ( N and P Channel )PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel)RDS(ON) (m) Max RDS(ON) (m) MaxVDSS ID VDSS ID46 @ VGS=10V 56 @ VGS=-10V30V 5.3A -30V -4.7A65 @ VGS=4.5V 90 @ VGS=-4.5VD2 5 4 G 26 3D2 S 2D1 7 2G 1S O-8D1 8 1S 11(TA=25

9.6. Size:811K samhop
stm8358s.pdf

S T M8358SS amHop Microelectronics C orp. Oct.28, 2005Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)(N-C hannel) (PP R ODUC T S UMMAR Y P R ODUC T S UMMAR Y -C hannel)V DS S ID R DS (ON) ( m W ) Max V DS S ID R DS (ON) ( m W ) Max 48 @ V G S = -10V25 @ VG S = 10V-30V -5.2A30V 7.2A 72 @ V G S = -4.5V36 @ V G S = 4.5VD1 D1 D2 D28 7 6 5S O-811

9.7. Size:185K samhop
stm8306.pdf

GreenProductS TM8306S amHop Microelectronics C orp.Mar.06, 2006 ver1.1Dual E nhancement Mode Field Effect Transistor ( N and P Channel)PR ODUC T S UMMAR Y (N-C hannel) (PPR ODUC T S UMMAR Y -C hannel)VDS S ID R DS (ON) ( m ) Max VDS S ID R DS (ON) ( m ) Max26 @ VG S = 10V 38 @ VG S = -10V7A -30V -6A30V35 @ VG S = 4.5 52 @ VG S = -4.5VD1 D1 D2 D28 7 6 5S O-8

9.8. Size:250K samhop
stm8320.pdf

STM8320aS mHop Microelectronics C orp.Ver 1.0Dual Enhancement Mode Field Effect Transistor ( N and P Channel )PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel)RDS(ON) (m) Max RDS(ON) (m) MaxVDSS ID VDSS ID23 @ VGS=10V 35 @ VGS=-10V30V 7.5A -30V -6.0A35 @ VGS=4.5V 55 @ VGS=-4.5VD2 5 4 G 26 3D2 S 2D1 7 2G 1S O-8D1 8 1S 11(TA=25C unless otherwi

9.9. Size:270K samhop
stm8330.pdf

GreenProductSTM8330aS mHop Microelectronics C orp.Ver 1.0Dual Enhancement Mode Field Effect Transistor (N and P Channel)PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel)RDS(ON) (m) Max RDS(ON) (m) MaxVDSS ID VDSS ID35 @ VGS=10V76 @ VGS=-10V30V 6A-30V -4.2A55 @ VGS=4.5V 138 @ VGS=-4.5VD2 5 4 G 2D2 6 3 S 2D1 7 2G 1S O-8D1 8 1 S 11C(TC=25

9.10. Size:962K cn vbsemi
stm8362.pdf

STM8362www.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 at VGS

Otros transistores... STM8358S , FDMS7606 , STM8330 , FDMS7608S , STM8324 , FDMS7620S , STM8320 , FDMS7650 , IRFB7545 , FDMS7650DC , STM8309 , FDMS7656AS , STM8306 , FDMS7658AS , STM8300 , FDMS7660 , STM8020 .

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