MEE3712T Todos los transistores

 

MEE3712T MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MEE3712T

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 166 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 66 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 21 nS

Cossⓘ - Capacitancia de salida: 572 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm

Encapsulados: TO220

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MEE3712T datasheet

 ..1. Size:1328K  matsuki electric
 mee3712t.pdf pdf_icon

MEE3712T

MEE3712T N-Channel 100V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 18m @VGS=10V The MEE3712T is a N-Channel enhancement mode power field effect Super high density cell design for extremely low RDS(ON) transistor, using Force-MOS patented Extended Trench Gate (ETG) Exceptional on-resistance and maximum DC current technology. This advanced technology is espec

 7.1. Size:1295K  matsuki electric
 mee3712f.pdf pdf_icon

MEE3712T

MEE3712F N-Channel 100V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 18m @VGS=10V The MEE3712F is a N-Channel enhancement mode power field effect Super high density cell design for extremely low RDS(ON) transistor, using Force-MOS patented Extended Trench Gate (ETG) Exceptional on-resistance and maximum DC current technology. This advanced technology is espec

 7.2. Size:1283K  matsuki electric
 mee3712h.pdf pdf_icon

MEE3712T

MEE3712H N-Channel 100V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 18m @VGS=10V The MEE3712H is a N-Channel enhancement mode power field effect Super high density cell design for extremely low RDS(ON) transistor, using Force-MOS patented Extended Trench Gate (ETG) Exceptional on-resistance and maximum DC current technology. This advanced technology is espec

 8.1. Size:1198K  matsuki electric
 mee3710t.pdf pdf_icon

MEE3712T

MEE3710T N-Channel 100-V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE3710T is a N-Channel enhancement mode power field effect RDS(ON) 23m @VGS=10V transistors, using Force-MOS patented Extended Trench Gate (ETG) Super high density cell design for extremely low RDS(ON) technology. This advanced technology is especially tailored to minimize Exceptional on-resistance

MOSTRAR MÁS

Otros transistores... ME95N10F , ME95N10F-G , ME96N03-G , MEE2348 , MEE2348-G , MEE3710T , MEE3712F , MEE3712H , IRF3710 , MEE3716F , MEE3716T , MEE3718T , MEE4292-G , MEE4292HP-G , MEE4292HT , MEE4292K-G , MEE4292P-G .

History: SUM110N06-3M4L | H7N60F | BSC265N10LSFG | MEE4292-G | APT1003RBLL | SVF840MJ

 

 

 

 

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