MEE3718T Todos los transistores

 

MEE3718T MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MEE3718T

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 166 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 91 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 22.8 nS

Cossⓘ - Capacitancia de salida: 900 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm

Encapsulados: TO220

 Búsqueda de reemplazo de MEE3718T MOSFET

- Selecciónⓘ de transistores por parámetros

 

MEE3718T datasheet

 ..1. Size:957K  matsuki electric
 mee3718t.pdf pdf_icon

MEE3718T

MEE3718T N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE3718T is a N-Channel enhancement mode power field effect RDS(ON) 11m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON) 23m @VGS=6V technology. This advanced technology is especially tailored to minimize Low Gate Charge on state resistance and gate charge, and en

 8.1. Size:1198K  matsuki electric
 mee3710t.pdf pdf_icon

MEE3718T

MEE3710T N-Channel 100-V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE3710T is a N-Channel enhancement mode power field effect RDS(ON) 23m @VGS=10V transistors, using Force-MOS patented Extended Trench Gate (ETG) Super high density cell design for extremely low RDS(ON) technology. This advanced technology is especially tailored to minimize Exceptional on-resistance

 8.2. Size:1328K  matsuki electric
 mee3712t.pdf pdf_icon

MEE3718T

MEE3712T N-Channel 100V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 18m @VGS=10V The MEE3712T is a N-Channel enhancement mode power field effect Super high density cell design for extremely low RDS(ON) transistor, using Force-MOS patented Extended Trench Gate (ETG) Exceptional on-resistance and maximum DC current technology. This advanced technology is espec

 8.3. Size:1632K  matsuki electric
 mee3716f.pdf pdf_icon

MEE3718T

Preliminary-MEE3716F N-Channel 100-V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE3716F is a N-Channel enhancement mode power field effect RDS(ON) 14m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) Low Gate Charge technology. This advanced technology is especially tailored to minimize Exceptional on-resistance and maximum DC current on st

MOSTRAR MÁS

Otros transistores... MEE2348 , MEE2348-G , MEE3710T , MEE3712F , MEE3712H , MEE3712T , MEE3716F , MEE3716T , IRFB4115 , MEE4292-G , MEE4292HP-G , MEE4292HT , MEE4292K-G , MEE4292P-G , MEE4292T , MEE42942-G , MEE4294HP-G .

History: CPH3459 | IGT60R070D1

 

 

 

 

↑ Back to Top
.