MEE4292HP-G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MEE4292HP-G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 59.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 48.6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 48.5 nS
Cossⓘ - Capacitancia de salida: 739 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
Encapsulados: TO251
Búsqueda de reemplazo de MEE4292HP-G MOSFET
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MEE4292HP-G datasheet
mee4292hp-g.pdf
MEE4292HP-G N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE4292HP-G is a N-Channel enhancement mode power field RDS(ON) 12m @VGS=10V effect transistor, using Force-MOS patented Extended Trench Gate (ETG) Super high density cell design for extremely low RDS(ON) technology. This advanced technology is especially tailored to minimize Exceptional on-resistance
mee4292ht.pdf
MEE4292HT N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE4292HT is a N-Channel enhancement mode power field effect RDS(ON) 12m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) Super high density cell design for extremely low RDS(ON) technology. This advanced technology is especially tailored to minimize Exceptional on-resistance and
mee4292-g.pdf
MEE4292-G N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE4292-G is a N-Channel enhancement mode power field effect RDS(ON) 11m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON) 16m @VGS=4.5V technology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON) on
mee4292p-g.pdf
MEE4292P-G N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE4292P-G is a N-Channel enhancement mode power field effect RDS(ON) 12m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON 17.2m @VGS=4.5V technology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON)
Otros transistores... MEE3710T , MEE3712F , MEE3712H , MEE3712T , MEE3716F , MEE3716T , MEE3718T , MEE4292-G , P55NF06 , MEE4292HT , MEE4292K-G , MEE4292P-G , MEE4292T , MEE42942-G , MEE4294HP-G , MEE4294HT , MEE4294K .
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