MEE4294HT Todos los transistores

 ..1. Size:1111K  matsuki electric
 mee4294ht.pdf

MEE4294HT N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE4294HT is a N-Channel enhancement mode power field effect RDS(ON) 12m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) Super high density cell design for extremely low RDS(ON) technology. This advanced technology is especially tailored to minimize Exceptional on-resistance and

 6.1. Size:541K  matsuki electric
 mee4294hp-g.pdf

MEE4294HP-G N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 10m @VGS=10V The MEE4294HP-G is a N-Channel enhancement mode power field Super high density cell design for extremely low RDS(ON) effect transistor, using Force-MOS patented Extended Trench Gate Exceptional on-resistance and maximum DC current (ETG) technology. This advanced technology is esp

 7.1. Size:954K  matsuki electric
 mee4294k mee4294k-g.pdf

MEE4294K/MEE4294K-G N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE4294K-G is a N-Channel enhancement mode power field effect RDS(ON) 10.5m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON) 16.5m @VGS=4.5V technology. This advanced technology is especially tailored to minimize Super high density cell design for extremely

 7.2. Size:931K  matsuki electric
 mee4294k2 mee4294k2-g.pdf

MEE4294K2/MEE4294K2-G N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE4294K2-G is a N-Channel enhancement mode power field effect RDS(ON) 10.5m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON) 16.5m @VGS=4.5V technology. This advanced technology is especially tailored to minimize Super high density cell design for extreme

 7.3. Size:1518K  matsuki electric
 mee4294-g.pdf

MEE4294-G N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE4294-G is a N-Channel enhancement mode power field effect RDS(ON) 10.5m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON) 16.5m @VGS=4.5V technology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON)

 7.4. Size:1044K  matsuki electric
 mee4294t2.pdf

MEE4294T2 N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE4294T2 is a N-Channel enhancement mode power field effect RDS(ON) 11.5m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON) 16.5m @VGS=4.5V technology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON)

 7.5. Size:930K  matsuki electric
 mee4294p-g.pdf

MEE4294P-G N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE4294P-G is a N-Channel enhancement mode power field effect RDS(ON) 10.5m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON) 16.5m @VGS=4.5V technology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(O

 7.6. Size:928K  matsuki electric
 mee42942-g.pdf

MEE42942-G N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE42942-G is a N-Channel enhancement mode power field effect RDS(ON) 10.5m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON) 16.5m @VGS=4.5V technology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(O

 7.7. Size:905K  matsuki electric
 mee4294p2-g.pdf

MEE4294P2-G N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE4294P2-G is a N-Channel enhancement mode power field effect RDS(ON) 10.5m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON) 16.5m @VGS=4.5V technology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS