HCA90R450 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HCA90R450
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 114 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 10.7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 21 nS
Cossⓘ - Capacitancia de salida: 22.1 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.45 Ohm
Paquete / Cubierta: TO247
Búsqueda de reemplazo de HCA90R450 MOSFET
HCA90R450 Datasheet (PDF)
hca90r450.pdf

Apr 2023HCA90R450900V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 950 V Extremely low switching lossID 10.7 A Excellent stability and uniformityRDS(on), max 0.45 100% Avalanche Tested Built-in ESD DiodeQg, Typ 29 nCApplicationPackage & Internal CircuitTO-247 SYMBOL Swit
hca90r800.pdf

Apr. 2023HCA90R800900V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 950 V Extremely low switching lossID 6.7 A Excellent stability and uniformityRDS(on), max 0.8 100% Avalanche Tested Built-in ESD DiodeQg, Typ 17.4 nCApplicationPackage & Internal CircuitTO-247 SYMBOL Swi
hca90r300.pdf

Apr 2023HCA90R300900V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 950 V Extremely low switching lossID 14.5 A Excellent stability and uniformityRDS(on), max 0.3 100% Avalanche Tested Built-in ESD DiodeQg, Typ 43 nCApplicationPackage & Internal CircuitTO-247 SYMBOL Switc
Otros transistores... MS5N100FT , MS5N100FE , MS5N100FD , SJMN600R70F , HCA60R290 , HCA65R165 , HCA70R180 , HCA90R300 , IRFZ46N , HCA90R800 , HCD60R260 , HCD60R490 , HCD60R750 , HCD60R900 , HCD65R2K2 , HCD65R2K7 , HCD65R450 .
History: SPW16N50C3 | IXTP02N120P | IXTH30N50L2 | TK130F06K3 | HCA60R290 | SVS5N65FD2 | JCS19N20F
History: SPW16N50C3 | IXTP02N120P | IXTH30N50L2 | TK130F06K3 | HCA60R290 | SVS5N65FD2 | JCS19N20F



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: MPT035N08S | MPT035N08P | MPG150N10S | MPG150N10P | MPG120N06S | MPG120N06P | MPG08N68S | MPG08N68P | MPF10N65 | MDT4N65 | MDT30P10D | MD70N10 | MD50N20 | MD25N50 | MD20N50 | MD100N20
Popular searches
rjp63g4 datasheet | 2sc1115 | c3998 transistor | 2sa679 | 2sc3181 | 2sb324 | 2sc1904 | 2sc281