HCS60R900S Todos los transistores

 

HCS60R900S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HCS60R900S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 13 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.9 Ohm
   Paquete / Cubierta: TO220FS
 

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HCS60R900S Datasheet (PDF)

 ..1. Size:351K  semihow
 hcs60r900s.pdf pdf_icon

HCS60R900S

June 2019HCS60R900S600V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 5.0 A Excellent stability and uniformityRDS(on), max 0.9 100% Avalanche Tested Built-in ESD DiodeQg, Typ 9.3 nCApplicationPackage & Internal CircuitTO-220FS SYMBOL S

 8.1. Size:401K  semihow
 hcs60r260s.pdf pdf_icon

HCS60R900S

Sep 2020HCS60R260S600V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 14.4 A Excellent stability and uniformityRDS(on), max 0.26 100% Avalanche Tested Built-in ESD DiodeQg, Typ 31 nCApplicationPackage & Internal CircuitTO-220FS SYMBOL S

 8.2. Size:421K  semihow
 hcs60r150st.pdf pdf_icon

HCS60R900S

April 2020HCS60R150ST600V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 21.4 A Excellent stability and uniformityRDS(on), max 0.15 100% Avalanche Tested Built-in ESD DiodeQg, Typ 50 nCApplicationPackage & Internal CircuitTO-220FT SYMBOL

 8.3. Size:402K  semihow
 hcs60r260st.pdf pdf_icon

HCS60R900S

Sep 2020HCS60R260ST600V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 14.4 A Excellent stability and uniformityRDS(on), max 0.26 100% Avalanche Tested Built-in ESD DiodeQg, Typ 31 nCApplicationPackage & Internal CircuitTO-220FT SYMBOL

MOSTRAR MÁS

Otros transistores... HCP90R300 , HCP90R450 , HCP90R800 , HCS60R099 , HCS60R099ST , HCS60R150ST , HCS60R260S , HCS60R260ST , 7N65 , HCS65R165ST , HCS65R210ST , HCS65R450S , HCS65R450ST , HCS65R830ST , HCS70R180S , HCS70R230S , HCS70R600ST .

History: HCS60R260ST | AUIRF7675M2 | SI4894BDY

 

 
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