FDMS7670 Todos los transistores

 ..1. Size:319K  fairchild semi
 fdms7670.pdf

April 2009 FDMS7670 N-Channel PowerTrench MOSFET 30 V, 3.8 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 3.8 m at VGS = 10 V, ID = 21 A improve the overall efficiency and to minimize switch node Max rDS(on) = 5.0 m at VGS = 4.5 V, ID = 17 A ringing of DC/DC converters using either synchronous or conventional switc

 0.1. Size:384K  1
 fdms7670as.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.2. Size:243K  fairchild semi
 fdms7670as.pdf

March 2010 FDMS7670AS N-Channel PowerTrench SyncFETTM 30 V, 42 A, 3 m Features General Description The FDMS7670AS has been designed to minimize losses in Max rDS(on) = 3.0 m at VGS = 10 V, ID = 21 A power conversion application. Advancements in both silicon and Max rDS(on) = 3.2 m at VGS = 7 V, ID = 19 A package technologies have been combined to offer the lowest Adv

 7.1. Size:503K  1
 fdms7672.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.2. Size:482K  fairchild semi
 fdms7672as.pdf

September 2009 FDMS7672AS N-Channel PowerTrench SyncFETTM 30 V, 42 A, 4 m Features General Description The FDMS7672AS has been designed to minimize losses in Max rDS(on) = 4.0 m at VGS = 10 V, ID = 18 A power conversion application. Advancements in both silicon and Max rDS(on) = 4.5 m at VGS = 7 V, ID = 16 A package technologies have been combined to offer the lowest

 7.3. Size:271K  fairchild semi
 fdms7678.pdf

January 2015 FDMS7678 N-Channel Power Trench MOSFET 30 V, 26 A, 5.5 m Features General Description Max rDS(on) = 5.5 m at VGS = 10 V, ID = 17.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 6.8 m at VGS = 4.5 V, ID = 15 A been especially tailored to minimize the on-state resistance. This High p

 7.4. Size:251K  fairchild semi
 fdms7676.pdf

July 2009 FDMS7676 N-Channel PowerTrench MOSFET 30 V, 5.5 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 5.5 m at VGS = 10 V, ID = 19 A improve the overall efficiency and to minimize switch node Max rDS(on) = 7.6 m at VGS = 4.5 V, ID = 15 A ringing of DC/DC converters using either synchronous or conventional switch

 7.5. Size:323K  fairchild semi
 fdms7672.pdf

April 2009 FDMS7672 N-Channel PowerTrench MOSFET 30 V, 5.0 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 5.0 m at VGS = 10 V, ID = 19 A improve the overall efficiency and to minimize switch node Max rDS(on) = 6.9 m at VGS = 4.5 V, ID = 15 A ringing of DC/DC converters using either synchronous or conventional switc

 7.6. Size:503K  onsemi
 fdms7672as.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur