STM6930A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STM6930A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 2 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 4.8 A
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 82 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
Encapsulados: SOP8
Búsqueda de reemplazo de STM6930A MOSFET
- Selecciónⓘ de transistores por parámetros
STM6930A datasheet
..1. Size:136K samhop
stm6930a.pdf 
Green Product S TM6930A S amHop Microelectronics C orp. J une,8 2006 ver1.4 Dual N-Channel E nhancement Mode Field E ffect Transistor PR ODUC T S UMMAR Y F E ATUR E S S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m ) Max R ugged and reliable. 50 @ VG S = 10V 55V 4.8A S urface Mount Package. 75 @ VG S = 4.5V D1 D1 D2 D2 8 7 6 5 S O-8 1 1 2 3 4 S 1 G
9.1. Size:720K samhop
stm6920.pdf
S T M6920 S amHop Microelectronics C orp. Aug,18 2005 ver1.2 Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y F E AT UR E S S uper high dense cell design for low R DS (ON). V DS S ID R DS (ON) ( m W ) Max R ugged and reliable. 25 @ V G S = 10V 40V 7A S urface Mount Package. 45 @ V G S = 4.5V D1 D1 D2 D2 8 7 6 5 S O-8 1 1 2 3 4 S 1 G 1 S 2 G 2 A
9.2. Size:169K samhop
stm6967.pdf
Green Product STM6967 a S mHop Microelectronics C orp. Ver 1.0 P-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 86 @ VGS=-10V Suface Mount Package. -60V -4A 125 @ VGS=-4.5V D 5 4 G 6 3 D S 7 2 D S S O-8 D 8 1 S 1 (TA=25 C unless otherwise noted) ABS
9.3. Size:167K samhop
stm6928.pdf
Green Product STM6928 a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 14 @ VGS=10V Suface Mount Package. 40V 9.5A 16 @ VGS=4.5V D2 5 4 G 2 6 3 D2 S 2 D1 7 2 G 1 S O-8 D1 8 1 S 1 1 (TA=25 C unless otherwi
9.4. Size:141K samhop
stm6926.pdf
Green Product S TM6926 S amHop Microelectronics C orp. Mar.29 ,2007 Dual N-Channel E nhancement Mode Field E ffect Transistor F E ATUR E S PR ODUC T S UMMAR Y S uper high dense cell design for low R DS (ON). ID R DS (ON) ( m ) Max VDS S R ugged and reliable. 16 @ VG S = 10V S urface Mount Package. 8.5A 40V 18 @ VG S = 4.5V E S D Protected. D1 D1 D2 D2 8 7 6 5 S O-8 1
9.5. Size:134K samhop
stm6914.pdf
Green Product STM6914 a S mHop Microelectronics C orp. Ver 1.1 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 32 @ VGS=10V Suface Mount Package. 30V 6.5A 52 @ VGS=4.5V D2 5 4 G 2 6 D2 3 S 2 D1 7 2 G 1 SO-8 D1 8 1 S 1 1 ABSOLUTE MAXIMUM RATINGS
9.6. Size:91K samhop
stm6968.pdf
S TM6968 S amHop Microelectronics C orp. Nov 12.2006 Dual N-Channel E nhancement Mode Field E ffect Transistor PR ODUC T S UMMAR Y FEATUR ES S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m ) Max R ugged and reliable. 60 @ VGS = 10V 60V 5A Surface Mount Package. 70 @ VGS =4.5V ESD Protected. D1 D1 D2 D2 8 7 6 5 SO-8 1 1 2 3 4 S 1 G 1 S 2 G 2 ABS OLUTE
9.7. Size:131K samhop
stm6922.pdf
Green Product S TM6922 S amHop Microelectronics C orp. Jan.22 ,2007 Dual N-Channel E nhancement Mode Field E ffect Transistor F E ATUR E S PR ODUC T S UMMAR Y S uper high dense cell design for low R DS (ON). ID R DS (ON) ( m ) Max VDS S R ugged and reliable. 26 @ VG S = 10V S urface Mount Package. 40V 7A 33 @ VG S = 4.5V E S D Protected. D1 D1 D2 D2 8 7 6 5 S O-8 1 1
9.8. Size:100K samhop
stm6960a.pdf
Green r r P Pr Pr Prod STM6960A a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 71 @ VGS=10V Suface Mount Package. 60V 4A 92 @ VGS=4.5V 5 4 G 2 D2 6 3 D2 S 2 7 2 D1 G 1 SO-8 D1 8 1 S 1 1 (TA=25 C un
9.9. Size:137K samhop
stm6962.pdf
Green Product STM6962 SamHop Microelectronics Corp. Aug 29.2006 Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY FEATURES Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) ( m ) Max Rugged and reliable. 36 @ VGS = 10V 60V 6.5A Surface Mount Package. 42 @ VGS = 4.5V D1 D1 D2 D2 8 7 6 5 SO-8 1 1 2 3 4 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS
9.10. Size:136K samhop
stm6916.pdf
Green Product STM6916 a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 12.5 @ VGS=10V Suface Mount Package. 30V 10A 16 @ VGS=4.5V 5 4 D2 G 2 6 3 D2 S 2 D1 7 2 G 1 SO-8 8 1 D1 S 1 1 ABSOLUTE MAXIMUM RATINGS
9.12. Size:116K samhop
stm6915.pdf
S TM6915 S amHop Microelectronics C orp. Dec, 12 2006 Dual N-Channel E nhancement Mode Field E ffect Transistor PR ODUC T S UMMAR Y F E ATUR E S S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m ) Max R ugged and reliable. 19 @ VG S = 10V 30V 8.5A S urface Mount Package. 28 @ VG S = 4.5V D1 D1 D2 D2 8 7 6 5 S O-8 1 1 2 3 4 S 1 G 1 S 2 G 2 ABS OLUTE MAX
9.13. Size:556K samhop
stm6912.pdf
S T M6912 S amHop Microelectronics C orp. Aug,18 2005 ver 1.2 Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y F E AT UR E S S uper high dense cell design for low R DS (ON). V DS S ID R DS (ON) ( m W ) Max R ugged and reliable. 32 @ V G S = 10V 30V 6A S urface Mount Package. 57 @ V G S = 4.5V D1 D1 D2 D2 8 7 6 5 S O-8 1 1 2 3 4 S 1 G 1 S 2 G 2
9.14. Size:184K samhop
stm6924.pdf
Green Product STM6924 a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 28 @ VGS=10V Suface Mount Package. 40V 6.8A 46 @ VGS=4.5V D2 5 4 G 2 6 3 D2 S 2 D1 7 2 G 1 S O-8 D1 8 1 S 1 1 (TA=25 C unless otherwi
9.15. Size:182K samhop
stm6966.pdf
Green Product STM6966 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 80 @ VGS=10V Suface Mount Package. 60V 4.5A 110 @ VGS=4.5V ESD Protected. D 5 4 G D 6 3 S 7 2 D S S O-8 8 1 D S 1 (TA=25 C unless otherw
9.16. Size:112K samhop
stm6960.pdf
Green Product STM6960 a S mHop Microelectronics C orp. Ver 1.2 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 55 @ VGS=10V Suface Mount Package. 60V 5.5A 70 @ VGS=4.5V D2 5 4 G2 6 3 D2 S2 D1 7 2 G1 SO-8 8 1 D1 S1 1 (TA=25 C unless otherwise
9.17. Size:697K samhop
stm6920a.pdf
S T M6920A S amHop Microelectronics C orp. Apr,08.2005 Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y F E AT UR E S S uper high dense cell design for low R DS (ON). V DS S ID R DS (ON) ( m W ) Max R ugged and reliable. 35 @ V G S = 10V 40V 5A S urface Mount Package. 62 @ V G S = 4.5V D1 D1 D2 D2 8 7 6 5 S O-8 1 1 2 3 4 S 1 G 1 S 2 G 2 ABS OLU
9.18. Size:113K samhop
stm6913a.pdf
Green Product S TM6913A S amHop Microelectronics C orp. Aug. 10 2012 ver1.2 Dual N-Channel E nhancement Mode Field E ffect Transistor ff ff PR ODUC T S UMMAR Y FEATUR ES S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m ) Max R ugged and reliable. 18 @ VGS = 10V 30V 8.2A S urface Mount Package. f f 25 @ VGS =4.5V D1 D1 D2 D2 8 7 6 5 SO-8 1 1 2 3 4
Otros transistores... STM8300
, FDMS7660
, STM8020
, FDMS7660AS
, STM6970
, FDMS7670
, STM6960
, FDMS7670AS
, IRF540N
, FDMS7672
, STM6928
, FDMS7672AS
, STM6926
, FDMS7676
, STM6924
, FDMS7682
, STM6922
.
