HFD2N60F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HFD2N60F
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 42 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 6.5 nC
trⓘ - Tiempo de subida: 17 nS
Cossⓘ - Capacitancia de salida: 37 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4.5 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de MOSFET HFD2N60F
HFD2N60F Datasheet (PDF)
hfu2n60f hfd2n60f.pdf
May 2017 HFU2N60F / HFD2N60F 600V N-Channel MOSFET Features Key Parameters Parameter Value Unit Originative New Design BVDSS 600 V Very Low Intrinsic Capacitances ID 2 A Excellent Switching Characteristics RDS(on), Typ 3.6 100% Avalanche Tested Qg, Typ 6.5 nC RoHS Compliant HFU2N60F HFD2N60F Symbol TO-251 TO-252 D S S G D G Ab
hfd2n60u hfu2n60u.pdf
June 2015BVDSS = 600 VRDS(on) typ = 4 HFD2N60U / HFU2N60U ID = 1.8 A600V N-Channel MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHFD2N60U HFU2N60U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 5.5 nC (T
hfd2n60u.pdf
Jan 2014BVDSS = 600 VRDS(on) typ = 4 HFD2N60U / HFU2N60U ID = 1.8 A600V N-Channel MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHFD2N60U HFU2N60U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 5.5 nC (Ty
hfd2n60s.pdf
March 2014BVDSS = 600 VRDS(on) typ HFD2N60S / HFU2N60SID = 1.9 A600V N-Channel MOSFETD-PAK I-PAK2FEATURES113 23 Originative New DesignHFD2N60S HFU2N60S Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.0 nC
hfd2n60.pdf
July 2005BVDSS = 600 VRDS(on) typ HFD2N60 / HFU2N60ID = 1.8 A600V N-Channel MOSFETD-PAK I-PAK2FEATURES113 23 Originative New DesignHFD2N60 HFU2N60 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 9.0 nC (Typ
hfd2n60s hfu2n60s.pdf
March 2014BVDSS = 600 VRDS(on) typ HFD2N60S / HFU2N60SID = 1.9 A600V N-Channel MOSFETD-PAK I-PAK2FEATURES113 23 Originative New DesignHFD2N60S HFU2N60S Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.0 nC
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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Recientemente añadidas las descripciónes de los transistores:
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