FDMS7672AS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDMS7672AS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 46 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 42 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 33 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
   Paquete / Cubierta: POWER56

Búsqueda de reemplazo de MOSFET FDMS7672AS

FDMS7672AS Datasheet (PDF)

..1. Size:482K fairchild semi
fdms7672as.pdf

September 2009FDMS7672ASN-Channel PowerTrench SyncFETTM 30 V, 42 A, 4 mFeatures General DescriptionThe FDMS7672AS has been designed to minimize losses in Max rDS(on) = 4.0 m at VGS = 10 V, ID = 18 Apower conversion application. Advancements in both silicon and Max rDS(on) = 4.5 m at VGS = 7 V, ID = 16 Apackage technologies have been combined to offer the lowest

..2. Size:503K onsemi
fdms7672as.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

6.1. Size:503K 1
fdms7672.pdf

6.2. Size:323K fairchild semi
fdms7672.pdf

April 2009FDMS7672N-Channel PowerTrench MOSFET 30 V, 5.0 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 5.0 m at VGS = 10 V, ID = 19 Aimprove the overall efficiency and to minimize switch node Max rDS(on) = 6.9 m at VGS = 4.5 V, ID = 15 Aringing of DC/DC converters using either synchronous or conventional switc

7.1. Size:384K 1
fdms7670as.pdf

7.2. Size:271K fairchild semi
fdms7678.pdf

January 2015FDMS7678N-Channel Power Trench MOSFET30 V, 26 A, 5.5 mFeatures General Description Max rDS(on) = 5.5 m at VGS = 10 V, ID = 17.5 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 6.8 m at VGS = 4.5 V, ID = 15 Abeen especially tailored to minimize the on-state resistance. This High p

7.3. Size:243K fairchild semi
fdms7670as.pdf

March 2010FDMS7670ASN-Channel PowerTrench SyncFETTM 30 V, 42 A, 3 mFeatures General DescriptionThe FDMS7670AS has been designed to minimize losses in Max rDS(on) = 3.0 m at VGS = 10 V, ID = 21 Apower conversion application. Advancements in both silicon and Max rDS(on) = 3.2 m at VGS = 7 V, ID = 19 Apackage technologies have been combined to offer the lowest Adv

7.4. Size:251K fairchild semi
fdms7676.pdf

July 2009FDMS7676N-Channel PowerTrench MOSFET 30 V, 5.5 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 5.5 m at VGS = 10 V, ID = 19 Aimprove the overall efficiency and to minimize switch node Max rDS(on) = 7.6 m at VGS = 4.5 V, ID = 15 Aringing of DC/DC converters using either synchronous or conventional switch

7.5. Size:319K fairchild semi
fdms7670.pdf

April 2009FDMS7670N-Channel PowerTrench MOSFET 30 V, 3.8 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 3.8 m at VGS = 10 V, ID = 21 Aimprove the overall efficiency and to minimize switch node Max rDS(on) = 5.0 m at VGS = 4.5 V, ID = 17 Aringing of DC/DC converters using either synchronous or conventional switc

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