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FDMS7672AS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDMS7672AS

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 46 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 42 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm

Encapsulados: POWER56

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FDMS7672AS datasheet

 ..1. Size:482K  fairchild semi
fdms7672as.pdf pdf_icon

FDMS7672AS

September 2009 FDMS7672AS N-Channel PowerTrench SyncFETTM 30 V, 42 A, 4 m Features General Description The FDMS7672AS has been designed to minimize losses in Max rDS(on) = 4.0 m at VGS = 10 V, ID = 18 A power conversion application. Advancements in both silicon and Max rDS(on) = 4.5 m at VGS = 7 V, ID = 16 A package technologies have been combined to offer the lowest

 ..2. Size:503K  onsemi
fdms7672as.pdf pdf_icon

FDMS7672AS

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 6.1. Size:503K  1
fdms7672.pdf pdf_icon

FDMS7672AS

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 6.2. Size:323K  fairchild semi
fdms7672.pdf pdf_icon

FDMS7672AS

April 2009 FDMS7672 N-Channel PowerTrench MOSFET 30 V, 5.0 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 5.0 m at VGS = 10 V, ID = 19 A improve the overall efficiency and to minimize switch node Max rDS(on) = 6.9 m at VGS = 4.5 V, ID = 15 A ringing of DC/DC converters using either synchronous or conventional switc

Otros transistores... FDMS7660AS , STM6970 , FDMS7670 , STM6960 , FDMS7670AS , STM6930A , FDMS7672 , STM6928 , IRFP460 , STM6926 , FDMS7676 , STM6924 , FDMS7682 , STM6922 , FDMS7692 , STM6920A , FDMS7692A .

History: SE150110G | SFS06R10DF

 

 

 

 

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