HFS12N65JS Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HFS12N65JS  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 75.6 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 12 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 20 nS

Cossⓘ - Capacitancia de salida: 154 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm

Encapsulados: TO220FS

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HFS12N65JS datasheet

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 hfs12n65js.pdf pdf_icon

HFS12N65JS

Mar. 2023 HFS12N65JS 650V N-Channel MOSFET Features Key Parameters Parameter Value Unit Superior Avalanche Rugged Technology BVDSS 650 V Robust Gate Oxide Technology Very Low Intrinsic Capacitances ID 12 A Excellent Switching Characteristics RDS(on), Typ 0.7 100% Avalanche Tested Qg, Typ 44.4 nC RoHS Compliant TO-220FS Symbol S D G Absolute Maximum

 6.1. Size:806K  semihow
 hfs12n65sa.pdf pdf_icon

HFS12N65JS

July 2021 BVDSS = 650 V RDS(on) typ = 0.67 HFS12N65SA ID = 12 A 650V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 41 nC (Typ.) Extended Safe Ope

 6.2. Size:240K  semihow
 hfs12n65s.pdf pdf_icon

HFS12N65JS

Aug 2009 BVDSS = 650 V RDS(on) typ = 0.67 HFS12N65S ID = 12 A 650V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 38 nC (Typ.) Unrivalled Gate Charge 38 nC (Typ ) E

 6.3. Size:158K  semihow
 hfs12n65u.pdf pdf_icon

HFS12N65JS

July 2014 BVDSS = 650 V RDS(on) typ = 0.67 HFS12N65U ID = 12 A 650V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 42 nC (Typ.) Extended Safe Operating Area Lo

MOSTRAR MÁS

Otros transistores... HFP2N60F, HFP4N60F, HFP50N06A, HFP5N60F, HFP730F, HFP830F, HFS10N65JS, HFS10N80A, IRF1405, HFS12N65SA, HFS18N50UT, HFS2N60F, HFS2N60FS, HFS3N80A, HFS4N60F, HFS4N60FS, HFS50N06A