HFU1N60SA Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HFU1N60SA  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 28 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

|VGSth|ⓘ - Tensión umbral entre puerta y fuente: 4 V

Qgⓘ - Carga de la puerta: 3.9 nC

trⓘ - Tiempo de subida: 5 nS

Cossⓘ - Capacitancia de salida: 19.4 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 11.5 Ohm

Encapsulados: TO251A

 Búsqueda de reemplazo de HFU1N60SA MOSFET

- Selecciónⓘ de transistores por parámetros

 

HFU1N60SA datasheet

 ..1. Size:1138K  semihow
 hfu1n60sa hfd1n60sa.pdf pdf_icon

HFU1N60SA

Jan. 2022 HFU1N60SA / HFD1N60SA 600V N-Channel MOSFET Features Key Parameters Parameter Value Unit Superior Avalanche Rugged Technology BVDSS 600 V Robust Gate Oxide Technology Very Low Intrinsic Capacitances ID 1.0 A Excellent Switching Characteristics RDS(on), Typ 9.3 100% Avalanche Tested Qg, Typ 3.9 nC RoHS Compliant HFU1N60SA HFD1N60SA Symbol TO-

 6.1. Size:195K  semihow
 hfd1n60s hfu1n60s.pdf pdf_icon

HFU1N60SA

Sep 2009 BVDSS = 600 V RDS(on) typ HFD1N60S / HFU1N60S ID = 1.0 A 600V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 3 2 3 Originative New Design HFD1N60S HFU1N60S Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 3.0 nC (T

 7.1. Size:244K  vishay
 irfr1n60a irfu1n60a sihfr1n60a sihfu1n60a.pdf pdf_icon

HFU1N60SA

IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 600 Definition RDS(on) (Max.) ( )VGS = 10 V 7.0 Low Gate Charge Qg Results in Simple Drive Qg (Max.) (nC) 14 Requirement Qgs (nC) 2.7 Improved Gate, Avalanche and Dynamic Qgd (nC) 8.1 dV/dt Ruggedness Configuration Sing

 7.2. Size:269K  vishay
 irfu1n60a sihfr1n60a sihfu1n60a.pdf pdf_icon

HFU1N60SA

IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 600 Definition RDS(on) (Max.) ( )VGS = 10 V 7.0 Low Gate Charge Qg Results in Simple Drive Qg (Max.) (nC) 14 Requirement Qgs (nC) 2.7 Improved Gate, Avalanche and Dynamic Qgd (nC) 8.1 dV/dt Ruggedness Configuration Sing

MOSTRAR MÁS

Otros transistores... HFS830F, HFS8N60UA, HFS8N65JS, HFS8N65SA, HFS9N90A, HFT1N60F, HFU1N60F, HFU1N60S, 20N60, HFU2N60F, HFU2N60S, HFU2N60U, HFU4N50, HFU5N40, HFU5N50S, HFU5N50U, HFU5N60F