HFU5N50S Todos los transistores

 

HFU5N50S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HFU5N50S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 48 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 V
   Qgⓘ - Carga de la puerta: 15.5 nC
   trⓘ - Tiempo de subida: 46 nS
   Cossⓘ - Capacitancia de salida: 86 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm
   Paquete / Cubierta: IPAK
 

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HFU5N50S Datasheet (PDF)

 ..1. Size:276K  semihow
 hfd5n50s hfu5n50s.pdf pdf_icon

HFU5N50S

OCT 2009BVDSS = 500 VRDS(on) typ HFD5N50S / HFU5N50SID = 4.0 A500V N-Channel MOSFETD-PAK I-PAK2FEATURES113 23 Originative New DesignHFD5N50S HFU5N50S Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15.5 nC

 7.1. Size:287K  semihow
 hfd5n50u hfu5n50u.pdf pdf_icon

HFU5N50S

June 2015BVDSS = 500 VRDS(on) typ HFD5N50U / HFU5N50U ID = 4.0 A500V N-Channel MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHFD5N50U HFU5N50U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 13 nC

 9.1. Size:324K  semihow
 hfd5n60s hfu5n60s.pdf pdf_icon

HFU5N50S

June 2015BVDSS = 600 VRDS(on) typ HFD5N60S / HFU5N60SID = 4.3 A600V N-Channel MOSFETD-PAK I-PAK2FEATURES113 23 Originative New DesignHFD5N60S HFU5N60S Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC

 9.2. Size:357K  semihow
 hfd5n60u hfu5n60u.pdf pdf_icon

HFU5N50S

June 2015BVDSS = 600 VRDS(on) typ = 2.0 HFD5N60U / HFU5N60U ID = 3.6 A600V N-Channel MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHFD5N60U HFU5N60U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC

MOSTRAR MÁS

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , SPP20N60C3 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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