HFU5N50U MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HFU5N50U
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 48 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 46 nS
   Cossⓘ - Capacitancia de salida: 86 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm
   Paquete / Cubierta: IPAK

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HFU5N50U Datasheet (PDF)

..1. Size:287K semihow
hfd5n50u hfu5n50u.pdf

June 2015BVDSS = 500 VRDS(on) typ HFD5N50U / HFU5N50U ID = 4.0 A500V N-Channel MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHFD5N50U HFU5N50U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 13 nC

7.1. Size:276K semihow
hfd5n50s hfu5n50s.pdf

OCT 2009BVDSS = 500 VRDS(on) typ HFD5N50S / HFU5N50SID = 4.0 A500V N-Channel MOSFETD-PAK I-PAK2FEATURES113 23 Originative New DesignHFD5N50S HFU5N50S Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15.5 nC

9.1. Size:324K semihow
hfd5n60s hfu5n60s.pdf

June 2015BVDSS = 600 VRDS(on) typ HFD5N60S / HFU5N60SID = 4.3 A600V N-Channel MOSFETD-PAK I-PAK2FEATURES113 23 Originative New DesignHFD5N60S HFU5N60S Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC

9.2. Size:357K semihow
hfd5n60u hfu5n60u.pdf

June 2015BVDSS = 600 VRDS(on) typ = 2.0 HFD5N60U / HFU5N60U ID = 3.6 A600V N-Channel MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHFD5N60U HFU5N60U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC

9.3. Size:199K semihow
hfd5n40 hfu5n40.pdf

July 2005BVDSS = 400 VRDS(on) typ HFD5N40 / HFU5N40ID = 3.4 A400V N-Channel MOSFETD-PAK I-PAK2FEATURES113 23 Originative New DesignHFD5N40 HFU5N40 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 13 nC (Typ

9.4. Size:1121K semihow
hfu5n65sa hfd5n65sa.pdf

May. 2022HFU5N65SA / HFD5N65SA650V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Superior Avalanche Rugged TechnologyBVDSS 650 V Robust Gate Oxide Technology Very Low Intrinsic CapacitancesID 4.2 A Excellent Switching CharacteristicsRDS(on), Typ 2.3 100% Avalanche TestedQg, Typ 14.2 nC RoHS CompliantHFU5N65SA HFD5N65SASymbolTO

9.5. Size:291K semihow
hfu5n60f hfd5n60f.pdf

Oct 2016HFU5N60F / HFD5N60F600V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Originative New DesignBVDSS 600 V Very Low Intrinsic CapacitancesID 5A Excellent Switching CharacteristicsRDS(on), Typ 1.8 100% Avalanche TestedQg, Typ 12.5 nC RoHS CompliantHFU5N60F HFD5N60FSymbolTO-251 TO-252DSSDGGAbsolute Maximum Ratings TC=25 unles

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