HFU5N60S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HFU5N60S  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 91 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 4.3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 45 nS

Cossⓘ - Capacitancia de salida: 60 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm

Encapsulados: IPAK

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HFU5N60S datasheet

 ..1. Size:324K  semihow
 hfd5n60s hfu5n60s.pdf pdf_icon

HFU5N60S

June 2015 BVDSS = 600 V RDS(on) typ HFD5N60S / HFU5N60S ID = 4.3 A 600V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 3 2 3 Originative New Design HFD5N60S HFU5N60S Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 10.5 nC

 7.1. Size:357K  semihow
 hfd5n60u hfu5n60u.pdf pdf_icon

HFU5N60S

June 2015 BVDSS = 600 V RDS(on) typ = 2.0 HFD5N60U / HFU5N60U ID = 3.6 A 600V N-Channel MOSFET D-PAK I-PAK FEATURES 2 1 Originative New Design 1 3 2 3 Superior Avalanche Rugged Technology HFD5N60U HFU5N60U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 10.5 nC

 7.2. Size:291K  semihow
 hfu5n60f hfd5n60f.pdf pdf_icon

HFU5N60S

Oct 2016 HFU5N60F / HFD5N60F 600V N-Channel MOSFET Features Key Parameters Parameter Value Unit Originative New Design BVDSS 600 V Very Low Intrinsic Capacitances ID 5A Excellent Switching Characteristics RDS(on), Typ 1.8 100% Avalanche Tested Qg, Typ 12.5 nC RoHS Compliant HFU5N60F HFD5N60F Symbol TO-251 TO-252 D S S D G G Absolute Maximum Ratings TC=25 unles

 8.1. Size:1121K  semihow
 hfu5n65sa hfd5n65sa.pdf pdf_icon

HFU5N60S

May. 2022 HFU5N65SA / HFD5N65SA 650V N-Channel MOSFET Features Key Parameters Parameter Value Unit Superior Avalanche Rugged Technology BVDSS 650 V Robust Gate Oxide Technology Very Low Intrinsic Capacitances ID 4.2 A Excellent Switching Characteristics RDS(on), Typ 2.3 100% Avalanche Tested Qg, Typ 14.2 nC RoHS Compliant HFU5N65SA HFD5N65SA Symbol TO

MOSTRAR MÁS

Otros transistores... HFU2N60F, HFU2N60S, HFU2N60U, HFU4N50, HFU5N40, HFU5N50S, HFU5N50U, HFU5N60F, IRFB4110, HFU5N60U, HFU5N65SA, HFW50N06A, HFW840, HRA40N08K, HRA45N08K, HRD120N10K, HRD180N10K