FDMS7692 Todos los transistores

 

FDMS7692 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDMS7692

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 27 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 28 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0075 Ohm

Encapsulados: POWER56

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FDMS7692 datasheet

 ..1. Size:416K  1
fdms7692.pdf pdf_icon

FDMS7692

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..2. Size:334K  fairchild semi
fdms7692.pdf pdf_icon

FDMS7692

June 2009 FDMS7692 N-Channel PowerTrench MOSFET 30 V, 7.5 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 7.5 m at VGS = 10 V, ID = 13 A improve the overall efficiency and to minimize switch node Max rDS(on) = 13 m at VGS = 4.5 V, ID = 10 A ringing of DC/DC converters using either synchronous or Advanced Package an

 0.1. Size:406K  1
fdms7692a.pdf pdf_icon

FDMS7692

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.2. Size:334K  fairchild semi
fdms7692a.pdf pdf_icon

FDMS7692

June 2009 FDMS7692A N-Channel PowerTrench MOSFET 30 V, 8 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 8 m at VGS = 10 V, ID = 13 A improve the overall efficiency and to minimize switch node Max rDS(on) = 14 m at VGS = 4.5 V, ID = 10 A ringing of DC/DC converters using either synchronous or Advanced Package and S

Otros transistores... FDMS7672 , STM6928 , FDMS7672AS , STM6926 , FDMS7676 , STM6924 , FDMS7682 , STM6922 , IRF640N , STM6920A , FDMS7692A , STM6920 , FDMS7694 , STM6916 , FDMS7698 , STM6915 , FDMS7700S .

 

 

 


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