OSG55R380FF Todos los transistores

 

OSG55R380FF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: OSG55R380FF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 28 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 550 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 11 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 22.8 nS
   Cossⓘ - Capacitancia de salida: 63.1 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.38 Ohm
   Paquete / Cubierta: TO220F
 

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OSG55R380FF Datasheet (PDF)

 ..1. Size:925K  oriental semi
 osg55r380ff.pdf pdf_icon

OSG55R380FF

OSG55R380FF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.1. Size:432K  oriental semi
 osg55r380df.pdf pdf_icon

OSG55R380FF

OSG55R380DF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.2. Size:398K  oriental semi
 osg55r380af.pdf pdf_icon

OSG55R380FF

OSG55R380AF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.3. Size:959K  oriental semi
 osg55r380pf.pdf pdf_icon

OSG55R380FF

OSG55R380PF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

MOSTRAR MÁS

Otros transistores... OSG55R160HZF , OSG55R160PZF , OSG55R290AF , OSG55R290DF , OSG55R290FF , OSG55R290PF , OSG55R380AF , OSG55R380DF , IRF1407 , OSG55R380PF , OSG55R580AF , OSG55R580DEF , OSG55R580DF , OSG55R580FEF , OSG55R580FF , OSG55R580PF , OSG60R017HT3F .

History: DN3135 | AP4N2R6S | G50N03A | AM40P06-135P | HUFA76429S3ST | HTN019N03P | TSM6981DCA

 

 
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