OSG55R380PF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: OSG55R380PF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 63 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 550 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 11 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 22.8 nS

Cossⓘ - Capacitancia de salida: 63.1 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.38 Ohm

Encapsulados: TO220

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OSG55R380PF datasheet

 ..1. Size:959K  oriental semi
 osg55r380pf.pdf pdf_icon

OSG55R380PF

OSG55R380PF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.1. Size:432K  oriental semi
 osg55r380df.pdf pdf_icon

OSG55R380PF

OSG55R380DF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.2. Size:398K  oriental semi
 osg55r380af.pdf pdf_icon

OSG55R380PF

OSG55R380AF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.3. Size:925K  oriental semi
 osg55r380ff.pdf pdf_icon

OSG55R380PF

OSG55R380FF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

MOSTRAR MÁS

Otros transistores... OSG55R160PZF, OSG55R290AF, OSG55R290DF, OSG55R290FF, OSG55R290PF, OSG55R380AF, OSG55R380DF, OSG55R380FF, TK10A60D, OSG55R580AF, OSG55R580DEF, OSG55R580DF, OSG55R580FEF, OSG55R580FF, OSG55R580PF, OSG60R017HT3F, OSG60R018HT3ZF