OSG60R022HT3ZF Todos los transistores

 

OSG60R022HT3ZF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: OSG60R022HT3ZF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 652 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 110 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 124 nS
   Cossⓘ - Capacitancia de salida: 526 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm
   Paquete / Cubierta: TO247
 

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OSG60R022HT3ZF Datasheet (PDF)

 ..1. Size:952K  oriental semi
osg60r022ht3zf.pdf pdf_icon

OSG60R022HT3ZF

OSG60R022HT3ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery d

 6.1. Size:395K  oriental semi
osg60r028htf.pdf pdf_icon

OSG60R022HT3ZF

OSG60R028HTF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switc

 6.2. Size:952K  oriental semi
osg60r028ht3f.pdf pdf_icon

OSG60R022HT3ZF

OSG60R028HT3F Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme swit

 6.3. Size:415K  oriental semi
osg60r028hf.pdf pdf_icon

OSG60R022HT3ZF

OSG60R028HF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

Otros transistores... OSG55R580DEF , OSG55R580DF , OSG55R580FEF , OSG55R580FF , OSG55R580PF , OSG60R017HT3F , OSG60R018HT3ZF , OSG60R020HT3F , IRFZ46N , OSG60R028HF , OSG60R028HT3F , OSG60R028HTF , OSG60R030HT3ZF , OSG60R030HTZF , OSG60R030HZF , OSG60R031HT3ZF , OSG60R031HZF .

History: HFP730U | IRFNJ130

 

 
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