OSG60R028HTF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: OSG60R028HTF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 455 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 80 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 71 nS
Cossⓘ - Capacitancia de salida: 504 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
Paquete / Cubierta: TO247
Búsqueda de reemplazo de OSG60R028HTF MOSFET
OSG60R028HTF Datasheet (PDF)
osg60r028htf.pdf

OSG60R028HTF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switc
osg60r028ht3f.pdf

OSG60R028HT3F Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme swit
osg60r028hf.pdf

OSG60R028HF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch
osg60r022ht3zf.pdf

OSG60R022HT3ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery d
Otros transistores... OSG55R580FF , OSG55R580PF , OSG60R017HT3F , OSG60R018HT3ZF , OSG60R020HT3F , OSG60R022HT3ZF , OSG60R028HF , OSG60R028HT3F , 2N60 , OSG60R030HT3ZF , OSG60R030HTZF , OSG60R030HZF , OSG60R031HT3ZF , OSG60R031HZF , OSG60R035HF , OSG60R035HT5ZF , OSG60R035TT5ZF .
History: IRHMS597260 | QM3009K | SH8K25 | NCE6020AQ | QM3009S | AO8807 | DMN3018SFG
History: IRHMS597260 | QM3009K | SH8K25 | NCE6020AQ | QM3009S | AO8807 | DMN3018SFG



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