OSG60R035HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: OSG60R035HF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 480 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 80 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 88.9 nS
Cossⓘ - Capacitancia de salida: 471.2 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm
Paquete / Cubierta: TO247
Búsqueda de reemplazo de OSG60R035HF MOSFET
OSG60R035HF Datasheet (PDF)
osg60r035hf.pdf

OSG60R035HF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch
osg60r035ht5zf.pdf

OSG60R035HT5ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery d
osg60r035tt5zf.pdf

OSG60R035TT5ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery d
osg60r030htzf.pdf

OSG60R030HTZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery di
Otros transistores... OSG60R028HF , OSG60R028HT3F , OSG60R028HTF , OSG60R030HT3ZF , OSG60R030HTZF , OSG60R030HZF , OSG60R031HT3ZF , OSG60R031HZF , K2611 , OSG60R035HT5ZF , OSG60R035TT5ZF , OSG60R038HT3ZF , OSG60R040HF , OSG60R041HZF , OSG60R055TT3F , OSG60R055TT3ZF , OSG60R060HMF .
History: OSG65R140KSZF | OSG65R290AF | CES2303 | H7P1006MD90TZ | LSDN65R380HT | FDS4435-NL | AM7444N
History: OSG65R140KSZF | OSG65R290AF | CES2303 | H7P1006MD90TZ | LSDN65R380HT | FDS4435-NL | AM7444N



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