OSG60R035HF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: OSG60R035HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 480 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

|VGSth|ⓘ - Tensión umbral entre puerta y fuente: 3.9 V

Qgⓘ - Carga de la puerta: 170 nC

trⓘ - Tiempo de subida: 88.9 nS

Cossⓘ - Capacitancia de salida: 471.2 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm

Encapsulados: TO247

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OSG60R035HF datasheet

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OSG60R035HF

OSG60R035HF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

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 osg60r035ht5zf.pdf pdf_icon

OSG60R035HF

OSG60R035HT5ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery d

 5.1. Size:934K  oriental semi
 osg60r035tt5zf.pdf pdf_icon

OSG60R035HF

OSG60R035TT5ZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery d

 6.1. Size:387K  oriental semi
 osg60r030htzf.pdf pdf_icon

OSG60R035HF

OSG60R030HTZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery di

MOSTRAR MÁS

Otros transistores... OSG60R028HF, OSG60R028HT3F, OSG60R028HTF, OSG60R030HT3ZF, OSG60R030HTZF, OSG60R030HZF, OSG60R031HT3ZF, OSG60R031HZF, 8N60, OSG60R035HT5ZF, OSG60R035TT5ZF, OSG60R038HT3ZF, OSG60R040HF, OSG60R041HZF, OSG60R055TT3F, OSG60R055TT3ZF, OSG60R060HMF