FDMS86103L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

December 2010FDMS86103LN-Channel PowerTrench MOSFET 100 V, 49 A, 8 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 8 m at VGS = 10 V, ID = 12 ASemiconductors advanced Power Trench process thant has Max rDS(on) = 11 m at VGS = 4.5 V, ID = 10 Abeen especially tailored to minimize the on-state resistance and Advanced

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MOSFET - NChannel,POWERTRENCH)100 V, 60 A, 8 mWFDMS86101General DescriptionThis N-Channel MOSFET is produced using ON Semiconductorswww.onsemi.comadvanced POWERTRENCH process that has been especiallytailored to minimize the on-state resistance and yet maintain superiorswitching performance.SDFeaturesDS Max rDS(on) = 8 mW at VGS = 10 V, ID = 13 A Max

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

May 2011FDMS86102LZN-Channel Power Trench MOSFET 100 V, 22 A, 25 mFeatures General Description Max rDS(on) = 25 m at VGS = 10 V, ID = 7 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor's advanced Power Trench process Max rDS(on) = 37 m at VGS = 4.5 V, ID = 5.8 Athat has been special tailored to minimize the on-state HBM ESD protection

January 2011FDMS86105N-Channel PowerTrench MOSFET 100 V, 26 A, 34 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 34 m at VGS = 10 V, ID = 6 ASemiconductors advanced Power Trench process that has Max rDS(on) = 54 m at VGS = 6 V, ID = 4.5 Abeen especially tailored to minimize the on-state resistance and yet maintain s

October 2014FDMS86101AN-Channel Shielded Gate PowerTrench MOSFET100 V, 60 A, 8 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET TechnologySemiconductors advanced PowerTrench process that Max rDS(on) = 8 m at VGS = 10 V, ID = 13 Aincorporates Shielded Gate technology. This process has been optimized for the on-stat

July 2013FDMS86101DCN-Channel Dual CoolTM Shielded Gate PowerTrench MOSFET100 V, 60 A, 7.5 mFeatures General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that Dual CoolTM Top Side Cooling PQFN packageincorporates Shielded Gate technology. Advancements in both Max rDS(on) = 7.5

October 2010FDMS86101N-Channel PowerTrench MOSFET 100 V, 60 A, 8 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 8 m at VGS = 10 V, ID = 13 ASemiconductors advanced Power Trench process thant has Max rDS(on) = 13.5 m at VGS = 6 V, ID = 9.5 Abeen especially tailored to minimize the on-state resistance and Advanced P

July 2010FDMS86104N-Channel PowerTrench MOSFET 100 V, 16 A, 24 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 24 m at VGS = 10 V, ID = 7 ASemiconductors advanced Power Trench process thant has Max rDS(on) = 39 m at VGS = 6 V, ID = 5.5 Abeen especially tailored to minimize the on-state resistance and Advanced Packa

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MOSFET - N-Channel,POWERTRENCH), DUALCOOL) 56 Shielded Gate100 V, 60 A, 7.5 mWFDMS86101DCwww.onsemi.comGeneral DescriptionThis N-Channel MOSFET is produced using FairchildSemiconductors advanced POWERTRENCH process that ELECTRICAL CONNECTIONincorporates Shielded Gate technology. Advancements in both siliconS Dand DUAL COOL package technologies have been combined to

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur