FDMS86104 Todos los transistores

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 fdms86104.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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 fdms86104.pdf

July 2010 FDMS86104 N-Channel PowerTrench MOSFET 100 V, 16 A, 24 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 24 m at VGS = 10 V, ID = 7 A Semiconductor s advanced Power Trench process thant has Max rDS(on) = 39 m at VGS = 6 V, ID = 5.5 A been especially tailored to minimize the on-state resistance and Advanced Packa

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 fdms86102lz.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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 fdms86105.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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 fdms86101.pdf

MOSFET - N Channel, POWERTRENCH) 100 V, 60 A, 8 mW FDMS86101 General Description This N-Channel MOSFET is produced using ON Semiconductor s www.onsemi.com advanced POWERTRENCH process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S D Features D S Max rDS(on) = 8 mW at VGS = 10 V, ID = 13 A Max

 6.4. Size:262K  fairchild semi
 fdms86103l.pdf

December 2010 FDMS86103L N-Channel PowerTrench MOSFET 100 V, 49 A, 8 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 8 m at VGS = 10 V, ID = 12 A Semiconductor s advanced Power Trench process thant has Max rDS(on) = 11 m at VGS = 4.5 V, ID = 10 A been especially tailored to minimize the on-state resistance and Advanced

 6.5. Size:317K  fairchild semi
 fdms86102lz.pdf

May 2011 FDMS86102LZ N-Channel Power Trench MOSFET 100 V, 22 A, 25 m Features General Description Max rDS(on) = 25 m at VGS = 10 V, ID = 7 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor's advanced Power Trench process Max rDS(on) = 37 m at VGS = 4.5 V, ID = 5.8 A that has been special tailored to minimize the on-state HBM ESD protection

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 fdms86105.pdf

January 2011 FDMS86105 N-Channel PowerTrench MOSFET 100 V, 26 A, 34 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 34 m at VGS = 10 V, ID = 6 A Semiconductor s advanced Power Trench process that has Max rDS(on) = 54 m at VGS = 6 V, ID = 4.5 A been especially tailored to minimize the on-state resistance and yet maintain s

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 fdms86101a.pdf

October 2014 FDMS86101A N-Channel Shielded Gate PowerTrench MOSFET 100 V, 60 A, 8 m Features General Description This N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET Technology Semiconductor s advanced PowerTrench process that Max rDS(on) = 8 m at VGS = 10 V, ID = 13 A incorporates Shielded Gate technology. This process has been optimized for the on-stat

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 fdms86101dc.pdf

July 2013 FDMS86101DC N-Channel Dual CoolTM Shielded Gate PowerTrench MOSFET 100 V, 60 A, 7.5 m Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Dual CoolTM Top Side Cooling PQFN package incorporates Shielded Gate technology. Advancements in both Max rDS(on) = 7.5

 6.9. Size:278K  fairchild semi
 fdms86101.pdf

October 2010 FDMS86101 N-Channel PowerTrench MOSFET 100 V, 60 A, 8 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 8 m at VGS = 10 V, ID = 13 A Semiconductor s advanced Power Trench process thant has Max rDS(on) = 13.5 m at VGS = 6 V, ID = 9.5 A been especially tailored to minimize the on-state resistance and Advanced P

 6.10. Size:408K  onsemi
 fdms86103l.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 6.11. Size:426K  onsemi
 fdms86101a.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 6.12. Size:468K  onsemi
 fdms86101dc.pdf

MOSFET - N-Channel, POWERTRENCH), DUAL COOL) 56 Shielded Gate 100 V, 60 A, 7.5 mW FDMS86101DC www.onsemi.com General Description This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced POWERTRENCH process that ELECTRICAL CONNECTION incorporates Shielded Gate technology. Advancements in both silicon S D and DUAL COOL package technologies have been combined to

 6.13. Size:548K  onsemi
 fdms86101.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur