2SK2723 Todos los transistores

 

2SK2723 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK2723
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 25 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   |Vgs(off)|ⓘ - Voltaje de corte de la puerta: 1 V
   Qgⓘ - Carga de la puerta: 35 nC
   trⓘ - Tiempo de subida: 185 nS
   Cossⓘ - Capacitancia de salida: 430 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
   Paquete / Cubierta: TO220F

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2SK2723 Datasheet (PDF)

 ..1. Size:83K  1
2sk2723.pdf

2SK2723 2SK2723

DATA SHEETMOS Field Effect Power Transistors2SK2723SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEPACKAGE DIMENSIONS(in millimeter)DESCRIPTION4.5 0.2This product is N-Channel MOS Field Effect Transistor 10.0 0.33.2 0.2designed for high current switching spplications.2.7 0.2FEATURES Low On-ResistanceRDS (on) 1 = 40m Max. (VGS = 10 V, ID = 13 A)R

 8.1. Size:83K  1
2sk2724.pdf

2SK2723 2SK2723

DATA SHEETMOS FIELD EFFECT POWER TRANSISTORS2SK2724SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTION PACKAGE DIMENSIONS (in millimeter)This product is N-Channel MOS Field Effect Transistor4.5 0.2designed for high current switching applications.10.0 0.33.2 0.22.7 0.2FEATURES Low On-ResistanceRDS(on)1 = 27 m Max. (VGS = 10 V, ID = 18 A)RDS(on)

 8.2. Size:209K  renesas
2sk2726.pdf

2SK2723 2SK2723

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. Size:209K  renesas
2sk2725.pdf

2SK2723 2SK2723

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.4. Size:209K  renesas
2sk2727.pdf

2SK2723 2SK2723

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.5. Size:209K  renesas
2sk2729.pdf

2SK2723 2SK2723

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.6. Size:52K  hitachi
2sk2728.pdf

2SK2723 2SK2723

2SK2728Silicon N Channel MOS FETHigh Speed Power SwitchingADE-208-454 B3rd. EditionFeatures Low on-resistance High speed switching Low drive current Avalanche ratingsOutlineTO3PDG1. Gate2. Drain12 (Flange) 33. SourceS2SK2728Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to source voltage VDSS 500 VGate to sour

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