STM4953 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

GreenProductS TM4953S amHop Microelectronics C orp.J ul 05 2005 ver 1.2Dual P-Channel E nhancement Mode Field E ffect TransistorPR ODUC T S UMMAR Y F E ATUR E SS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.55 @ VG S = -10V-30V -4.5AS urface Mount Package.85 @ VG S = -4.5VD1 D1 D2 D28 7 6 5S O-811 2 3 4S

S T M4952S amHop Microelectronics C orp.May,24 2005 ver1.1Dual P-C hannel E nhancement Mode Field E ffect TransistorP R ODUC T S UMMAR Y F E AT UR E SS uper high dense cell design for low R DS (ON).V DS S ID R DS (ON) ( m W ) MAXR ugged and reliable.50 @ V G S = -4.5V-20V -5.2AS urface Mount Package.80 @ V G S = -2.5VD1 D1 D2 D28 7 6 5S O-811 2 3 4S 1 G 1 S 2 G

S T M4973 S E P .8 2004S amHop Microelectronics C orp.Dual P-C hannel E nhancement Mode Field E ffect TransistorP R ODUC T S UMMAR Y F E AT UR E SS uper high dense cell design for low R DS (ON).V DS S ID R DS (ON) ( m W ) MaxR ugged and reliable.35 @ V G S = -10V-30V -6AS urface Mount Package.50 @ V G S = -4.5VD1 D1 D2 D28 7 6 5S O-811 2 3 4S 1 G 1 S 2 G 2ABS

STM4973www.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.029 at VGS = - 10 V - 7.3 100 % UIS TestedRoHS- 30 17 nCCOMPLIANT0.039 at VGS = - 4.5 V - 6.3APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top View