FDMS86300 Todos los transistores

 

FDMS86300 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDMS86300
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 104 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 42 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0039 Ohm
   Paquete / Cubierta: POWER56
 

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FDMS86300 datasheet

 ..1. Size:267K  fairchild semi
fdms86300.pdf pdf_icon

FDMS86300

August 2011 FDMS86300 N-Channel PowerTrench MOSFET 80 V, 42 A, 3.9 m Features General Description Max rDS(on) = 3.9 m at VGS = 10 V, ID = 19 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 5.5 m at VGS = 8 V, ID = 15.5 A ringing of DC/DC converters using either synchronous or Advanced Pac

 ..2. Size:452K  onsemi
fdms86300.pdf pdf_icon

FDMS86300

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.1. Size:244K  fairchild semi
fdms86300dc.pdf pdf_icon

FDMS86300

December 2014 FDMS86300DC N-Channel Dual CoolTM PowerTrench MOSFET 80 V, 110 A, 3.1 m Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 3.1 m at VGS = 10 V, ID = 24 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 4.0 m a

 0.2. Size:206K  onsemi
fdms86300dc.pdf pdf_icon

FDMS86300

FDMS86300DC POWERTRENCH) MOSFET, N-Channel, DUAL COOL) 56 80 V, 110 A, 3.1 mW General Description www.onsemi.com This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced POWERTRENCH process that ELECTRICAL CONNECTION incorporates Shielded Gate technology. Advancements in both silicon and DUAL COOL package technologies have been combined to S D offer the lowes

Otros transistores... STM4973 , FDMS86105 , STM4953 , FDMS86200 , FDMS86201 , FDMS8622 , STM4952 , FDMS86252 , IRFB3607 , FDMS86322 , FDMS86500L , FDMS86520L , FDMS8848NZ , FDMS8888 , STM4886E , FDMS9620S , STM4886 .

 

 
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