2SK2724 Todos los transistores

DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SK2724 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS (in millimeter) This product is N-Channel MOS Field Effect Transistor 4.5 0.2 designed for high current switching applications. 10.0 0.3 3.2 0.2 2.7 0.2 FEATURES Low On-Resistance RDS(on)1 = 27 m Max. (VGS = 10 V, ID = 18 A) RDS(on)

DATA SHEET MOS Field Effect Power Transistors 2SK2723 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS (in millimeter) DESCRIPTION 4.5 0.2 This product is N-Channel MOS Field Effect Transistor 10.0 0.3 3.2 0.2 designed for high current switching spplications. 2.7 0.2 FEATURES Low On-Resistance RDS (on) 1 = 40m Max. (VGS = 10 V, ID = 13 A) R

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK2728 Silicon N Channel MOS FET High Speed Power Switching ADE-208-454 B 3rd. Edition Features Low on-resistance High speed switching Low drive current Avalanche ratings Outline TO 3P D G 1. Gate 2. Drain 1 2 (Flange) 3 3. Source S 2SK2728 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDSS 500 V Gate to sour