STM4886E Todos los transistores

 

STM4886E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STM4886E

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 17.8 A

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 640 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm

Encapsulados: SOP8

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STM4886E datasheet

 ..1. Size:182K  samhop
 stm4886e.pdf pdf_icon

STM4886E

Green Product STM4886E a S mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 5 @ VGS=10V Suface Mount Package. 30V 17.8A 7.5 @ VGS=4.5V ESD Protected. D 5 4 G D 6 3 S 7 2 D S S O-8 8 1 D S 1 (TA=25 C unless other

 7.1. Size:114K  samhop
 stm4886.pdf pdf_icon

STM4886E

Green Product STM4886 a S mHop Microelectronics C orp. Ver 3.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Typ VDSS ID Rugged and reliable. 3.5 @ VGS=10V Suface Mount Package. 30V 18A 5.4 @ VGS=4.5V D 5 4 G 6 3 D S 7 2 S D SO-8 8 1 S D 1 ABSOLUTE MAXIMUM RATINGS (TA=25 C unle

 8.1. Size:697K  samhop
 stm4884a.pdf pdf_icon

STM4886E

S T M4884A S amHop Microelectronics C orp. Dec 28 2004 ver1.1 N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y F E AT UR E S S uper high dense cell design for low R DS (ON). V DS S ID R DS (ON) ( m W ) typ R ugged and reliable. 6 @ V G S = 10V 30V 12A S urface Mount Package. 8.5 @ V G S = 4.5V S O-8 1 ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwis

 8.2. Size:165K  samhop
 stm4880.pdf pdf_icon

STM4886E

STM4880 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 17 @ VGS=10V Suface Mount Package. 30V 9.6A 26 @ VGS=4.5V ESD Protected. D 5 4 G 6 3 D S 7 2 D S S O-8 8 1 D S 1 (TA=25 C unless otherwise noted) ABSOLU

MOSTRAR MÁS

Otros transistores... STM4952 , FDMS86252 , FDMS86300 , FDMS86322 , FDMS86500L , FDMS86520L , FDMS8848NZ , FDMS8888 , STP80NF70 , FDMS9620S , STM4886 , FDN302P , FDN304P , FDN304PZ , FDN306P , FDN308P , FDN327N .

 

 

 

 

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