FDN304PZ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

March 2003 FDN304PZ P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses 2.4 A, 20 V. RDS(ON) = 52 m @ VGS = 4.5 V Fairchilds advanced low voltage PowerTrench process. RDS(ON) = 70 m @ VGS = 2.5 V It has been optimized for battery power management RDS(ON) = 100 m @ VGS = 1.8 V app

January 2001FDN304PP-Channel 1.8V Specified PowerTrench MOSFETGeneral Description FeaturesThis P-Channel 1.8V specified MOSFET uses 2.4 A, 20 V. RDS(ON) = 52 m @ VGS = 4.5 VFairchilds advanced low voltage PowerTrench process.RDS(ON) = 70 m @ VGS = 2.5 VIt has been optimized for battery power managementRDS(ON) = 100 m @ VGS = 1.8

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

SMD Type MOSFETP-Channel MOSFETFDN304P (KDN304P)SOT-23Unit: mm+0.12.9 -0.1 Features+0.10.4 -0.1 VDS (V) =-20V 3 ID =-2.4A (VGS =-4.5V) RDS(ON) 52m (VGS =-4.5V) RDS(ON) 70m (VGS =-2.5V)1 2+0.1+0.050.95-0.1 0.1-0.01 RDS(ON) 100m (VGS =-1.8V)+0.11.9-0.11.GateD2.Source3.DrainG S Absolute Maximum Ratings

SMD Type MOSFETP-Channel MOSFETFDN304P (KDN304P)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.13 Features VDS (V) =-20V ID =-2.4A (VGS =-4.5V)1 2 RDS(ON) 52m (VGS =-4.5V)+0.02+0.10.15 -0.020.95 -0.1+0.1 RDS(ON) 70m (VGS =-2.5V) 1.9-0.2 RDS(ON) 100m (VGS =-1.8V)1.Gate2.SourceD 3.DrainG S Absolute Maximum Rati

RUMW UMW FDN304P SOT-23 Plastic-Encapsulate MOSFETS P-Channel 20-V(D-S) MOSFETFDN304P V(BR)DSS RDS(on)MAX ID52m@ -4.5V-20 V -2.4A70m@ -2.5V100m@ -1.8VFEATUREAPPLICATION TrenchFET Power MOSFET Battery protection Supper high density cell design Load switch Battery management MARKING Equivalent CircuitSOT23 1. GATE 2. SOURCE 3. DR

FDN304P-NLwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-