FDN304PZ Todos los transistores

 ..1. Size:123K  fairchild semi
 fdn304pz.pdf

March 2003 FDN304PZ P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses 2.4 A, 20 V. RDS(ON) = 52 m @ VGS = 4.5 V Fairchild s advanced low voltage PowerTrench process. RDS(ON) = 70 m @ VGS = 2.5 V It has been optimized for battery power management RDS(ON) = 100 m @ VGS = 1.8 V app

 7.1. Size:113K  fairchild semi
 fdn304p.pdf

January 2001 FDN304P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses 2.4 A, 20 V. RDS(ON) = 52 m @ VGS = 4.5 V Fairchild s advanced low voltage PowerTrench process. RDS(ON) = 70 m @ VGS = 2.5 V It has been optimized for battery power management RDS(ON) = 100 m @ VGS = 1.8

 7.2. Size:220K  onsemi
 fdn304p.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.3. Size:239K  onsemi
 fdn304p2.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.4. Size:1261K  kexin
 fdn304p.pdf

SMD Type MOSFET P-Channel MOSFET FDN304P (KDN304P) SOT-23 Unit mm +0.1 2.9 -0.1 Features +0.1 0.4 -0.1 VDS (V) =-20V 3 ID =-2.4A (VGS =-4.5V) RDS(ON) 52m (VGS =-4.5V) RDS(ON) 70m (VGS =-2.5V) 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 RDS(ON) 100m (VGS =-1.8V) +0.1 1.9-0.1 1.Gate D 2.Source 3.Drain G S Absolute Maximum Ratings

 7.5. Size:1458K  kexin
 fdn304p-3.pdf

SMD Type MOSFET P-Channel MOSFET FDN304P (KDN304P) SOT-23-3 Unit mm +0.2 2.9-0.1 +0.1 0.4 -0.1 3 Features VDS (V) =-20V ID =-2.4A (VGS =-4.5V) 1 2 RDS(ON) 52m (VGS =-4.5V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 RDS(ON) 70m (VGS =-2.5V) 1.9-0.2 RDS(ON) 100m (VGS =-1.8V) 1.Gate 2.Source D 3.Drain G S Absolute Maximum Rati

 7.6. Size:819K  umw-ic
 fdn304p.pdf

R UMW UMW FDN304P SOT-23 Plastic-Encapsulate MOSFETS P-Channel 20-V(D-S) MOSFET FDN304P V(BR)DSS RDS(on)MAX ID 52m @ -4.5V -20 V -2.4A 70m @ -2.5V 100m @ -1.8V FEATURE APPLICATION TrenchFET Power MOSFET Battery protection Supper high density cell design Load switch Battery management MARKING Equivalent Circuit SOT 23 1. GATE 2. SOURCE 3. DR

 7.7. Size:531K  cn shikues
 fdn304p.pdf

 7.8. Size:869K  cn vbsemi
 fdn304p-nl.pdf

FDN304P-NL www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT-