FDN306P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDN306P
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 0.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 12 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V
|Id|ⓘ - Corriente continua
de drenaje: 2.6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 10 nS
Cossⓘ - Capacitancia de salida: 454 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
Encapsulados: SSOT3
Búsqueda de reemplazo de FDN306P MOSFET
- Selecciónⓘ de transistores por parámetros
FDN306P datasheet
..1. Size:144K fairchild semi
fdn306p.pdf 
December 2001 FDN306P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses 2.6 A, 12 V. RDS(ON) = 40 m @ VGS = 4.5 V Fairchild s advanced low voltage PowerTrench process. RDS(ON) = 50 m @ VGS = 2.5 V It has been optimized for battery power management RDS(ON) = 80 m @ VG
..2. Size:260K onsemi
fdn306p.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
..4. Size:1475K cn vbsemi
fdn306p.pdf
FDN306P www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATIONS
9.1. Size:94K fairchild semi
fdn308p.pdf
February 2001 FDN308P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged 20 V, 1.5 A. RDS(ON) = 125 m @ VGS = 4.5 V gate version of Fairchild s advanced PowerTrench RDS(ON) = 190 m @ VGS = 2.5 V process. It has been optimized for power management applications with
9.2. Size:113K fairchild semi
fdn304p.pdf
January 2001 FDN304P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses 2.4 A, 20 V. RDS(ON) = 52 m @ VGS = 4.5 V Fairchild s advanced low voltage PowerTrench process. RDS(ON) = 70 m @ VGS = 2.5 V It has been optimized for battery power management RDS(ON) = 100 m @ VGS = 1.8
9.3. Size:123K fairchild semi
fdn304pz.pdf
March 2003 FDN304PZ P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses 2.4 A, 20 V. RDS(ON) = 52 m @ VGS = 4.5 V Fairchild s advanced low voltage PowerTrench process. RDS(ON) = 70 m @ VGS = 2.5 V It has been optimized for battery power management RDS(ON) = 100 m @ VGS = 1.8 V app
9.4. Size:103K fairchild semi
fdn302p.pdf
October 2000 FDN302P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged 20 V, 2.4 A. RDS(ON) = 0.055 @ VGS = 4.5 V gate version of Fairchild s advanced PowerTrench RDS(ON) = 0.080 @ VGS = 2.5 V process. It has been optimized for power management applications with a wide
9.5. Size:209K onsemi
fdn308p.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
9.6. Size:220K onsemi
fdn304p.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
9.7. Size:239K onsemi
fdn304p2.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
9.8. Size:1261K kexin
fdn304p.pdf
SMD Type MOSFET P-Channel MOSFET FDN304P (KDN304P) SOT-23 Unit mm +0.1 2.9 -0.1 Features +0.1 0.4 -0.1 VDS (V) =-20V 3 ID =-2.4A (VGS =-4.5V) RDS(ON) 52m (VGS =-4.5V) RDS(ON) 70m (VGS =-2.5V) 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 RDS(ON) 100m (VGS =-1.8V) +0.1 1.9-0.1 1.Gate D 2.Source 3.Drain G S Absolute Maximum Ratings
9.9. Size:1458K kexin
fdn304p-3.pdf
SMD Type MOSFET P-Channel MOSFET FDN304P (KDN304P) SOT-23-3 Unit mm +0.2 2.9-0.1 +0.1 0.4 -0.1 3 Features VDS (V) =-20V ID =-2.4A (VGS =-4.5V) 1 2 RDS(ON) 52m (VGS =-4.5V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 RDS(ON) 70m (VGS =-2.5V) 1.9-0.2 RDS(ON) 100m (VGS =-1.8V) 1.Gate 2.Source D 3.Drain G S Absolute Maximum Rati
9.10. Size:819K umw-ic
fdn304p.pdf
R UMW UMW FDN304P SOT-23 Plastic-Encapsulate MOSFETS P-Channel 20-V(D-S) MOSFET FDN304P V(BR)DSS RDS(on)MAX ID 52m @ -4.5V -20 V -2.4A 70m @ -2.5V 100m @ -1.8V FEATURE APPLICATION TrenchFET Power MOSFET Battery protection Supper high density cell design Load switch Battery management MARKING Equivalent Circuit SOT 23 1. GATE 2. SOURCE 3. DR
9.12. Size:454K cn shikues
fdn302p.pdf
FDN302P P-Channel Enhancement Mode MOSFET Channel Enhancement Mode MOSFET Channel Enhancement Mode MOSFET Channel Enhancement Mode MOSFET Channel Enhancement Mode MOSFET Feature Feature -20V/ RDS(ON) = 120m (MAX) @VGS = -4.5V. 20V/-2.4A, DS(ON) = 120m (MAX) @V = RDS(ON) = 150m (MAX) @VGS = -2.5V. DS(ON) = 150m (MAX) @V = Super High dense cell design for extremely lo
9.13. Size:869K cn vbsemi
fdn304p-nl.pdf
FDN304P-NL www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT-
9.14. Size:852K cn vbsemi
fdn302p.pdf
FDN302P www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATIONS
Otros transistores... FDMS8848NZ
, FDMS8888
, STM4886E
, FDMS9620S
, STM4886
, FDN302P
, FDN304P
, FDN304PZ
, IRFP250
, FDN308P
, FDN327N
, FDN342P
, FDN352AP
, FDN359BN
, STM4884A
, FDN361BN
, STM4884
.
History: JVC103K
| ALD1103DB
| BSC080N03MSG
| JVL102Y
