2SK2735 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK2735
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 20 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 225 nS
Cossⓘ - Capacitancia de salida: 520 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
Encapsulados: DPAK
Búsqueda de reemplazo de 2SK2735 MOSFET
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2SK2735 datasheet
..1. Size:90K renesas
2sk2735.pdf 
2SK2735(L), 2SK2735(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1029-0200 (Previous ADE-208-543) Rev.2.00 Sep 07, 2005 Features Low on-resistance RDS = 20 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004ZD-B RENESAS Package code PRSS0004ZD-C (Package name DPAK(L)-
0.1. Size:103K renesas
rej03g1029 2sk2735lsds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.1. Size:44K 1
2sk2734.pdf
2SK2734 Silicon N Channel MOS FET High Speed Power Switching ADE-208-520 (Z) 1st. Edition Jun 1997 Features Low on-resistance RDS(on) = 0.04 typ (at VGS = 10 V, ID = 2.5 A) 4V gate drive devices. Large current capacitance ID = 5 A Outline TO-92MOD. D G 1. Source 3 2 2. Drain 1 3. Gate S 2SK2734 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Un
8.2. Size:413K toshiba
2sk2733.pdf
2SK2733 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSIII) 2SK2733 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS = 8.0 (typ.) (ON) High forward transfer admittance Y = 0.9 S (typ.) fs Low leakage current I = 100 A (max) (V = 720 V) DSS DS Enhancement-mode Vth = 2.0 4.0
8.3. Size:94K renesas
2sk2738.pdf
2SK2738 Silicon N Channel MOS FET High Speed Power Switching REJ03G1032-0200 (Previous ADE-208-483) Rev.2.00 Sep 07, 2005 Features Low on-resistance RDS = 15 m typ High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0003AE-A (Package name TO-220C FM) D G 1. Gate 2. Drain 3. Source 1 2 3 S
8.4. Size:210K renesas
2sk2730.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.5. Size:88K renesas
2sk2736.pdf
2SK2736 Silicon N Channel MOS FET High Speed Power Switching REJ03G1030-0200 (Previous ADE-208-544) Rev.2.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 20 m typ. (VGS = 10 V, ID = 15 A) 4 V gate drive devices. High speed switching Outline RENESAS Package code PRSS0003AE-A (Package name TO-220C FM) D G 1. Gate 2. Drain 3. Source 1 2 3
8.6. Size:89K renesas
2sk2737.pdf
2SK2737 Silicon N Channel MOS FET High Speed Power Switching REJ03G1031-0400 (Previous ADE-208-533B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 10 m typ. 4 V gate drive devices. High speed switching Outline RENESAS Package code PRSS0003AE-A (Package name TO-220C FM) D G 1. Gate 2. Drain 3. Source 1 2 3 S Rev.4.00 Sep 07, 200
8.7. Size:145K rohm
2sk2739.pdf
Transistors Switching (300V, 16A) 2SK2739 FFeatures FExternal dimensions (Units mm) 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaran- teed to be 30V. 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FPackaging specificati
8.9. Size:112K rohm
2sk2731.pdf
Transistors Interface and switching (30V, 200mA) 2SK2731 FFeatures FExternal dimensions (Units mm) 1) Low on-resistance. 2) Fast switching speed. 3) Low-voltage drive (4V). 4) Easily designed drive circuits. 5) Easy to parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FEquivalent circuit 146 Transistors 2SK2731 FElectrical characteristics (Ta
8.11. Size:1015K kexin
2sk2731.pdf
SMD Type MOSFET N-Channel MOSFET 2SK2731 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features VDS (V) = 30V 1 2 ID = 0.2 A +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 RDS(ON) 2.8 (VGS = 10V) RDS(ON) 4.5 (VGS = 4V) 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VD
8.12. Size:1023K kexin
2sk2731-3.pdf
SMD Type MOSFET N-Channel MOSFET 2SK2731 SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 30V 1 2 ID = 0.2 A +0.02 +0.1 0.15 -0.02 0.95 -0.1 RDS(ON) 2.8 (VGS = 10V) +0.1 1.9 -0.2 RDS(ON) 4.5 (VGS = 4V) 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Volta
8.13. Size:799K cn vbsemi
2sk2738.pdf
2SK2738 www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.010 at VGS = 10 V 60 Material categorization 60 0.012 at VGS = 4.5 V 50 TO-220 FULLPAK D G S D S G Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Paramete
Otros transistores... 2SK2706, 2SK2707, 2SK2708, 2SK2709, 2SK2710, 2SK2723, 2SK2724, 2SK2734, IRF630, 2SK2736, 2SK2737, 2SK2738, 2SK2753-01, 2SK2778, 2SK2779, 2SK2788, 2SK2796
