STM4840 Todos los transistores

 ..1. Size:109K  samhop
 stm4840.pdf

 9.1. Size:116K  1
 stm4806.pdf

Green Product STM4806 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 7.5 @ VGS=10V Suface Mount Package. 30V 15A 9.9 @ VGS=4.5V D 5 4 G 6 3 D S 7 2 S D SO-8 D 8 1 S 1 ABSOLUTE MAXIMUM RATINGS (TA=

 9.2. Size:89K  1
 stm4808.pdf

SamHop Selection Guide - Mosfet Product N Channel Product Rds(on) / m Ohm max Qg (nC) Vgs PD Vgs(th) Ciss Coss Crss Qgs Qgd Part No. Package Configuration Vds ID ESD ( ) (W) (typ) (pf) (pF) (pF) (nC) (nC) 10V 4.5V 4.0V 3.7V 3.1V 2.5V 10V 4.5V 4.0V 2.5V STM4800S SOP8 Single-N 30 20 8.0 2.50 20.0 28.0 1.70 820 177 60 15.0 7.7 2.20 4.70 STM4820 SOP8 Single-N 30 20 8.9 2.50 21.0 30.0 1.70

 9.3. Size:697K  samhop
 stm4884a.pdf

S T M4884A S amHop Microelectronics C orp. Dec 28 2004 ver1.1 N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y F E AT UR E S S uper high dense cell design for low R DS (ON). V DS S ID R DS (ON) ( m W ) typ R ugged and reliable. 6 @ V G S = 10V 30V 12A S urface Mount Package. 8.5 @ V G S = 4.5V S O-8 1 ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwis

 9.4. Size:165K  samhop
 stm4880.pdf

STM4880 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 17 @ VGS=10V Suface Mount Package. 30V 9.6A 26 @ VGS=4.5V ESD Protected. D 5 4 G 6 3 D S 7 2 D S S O-8 8 1 D S 1 (TA=25 C unless otherwise noted) ABSOLU

 9.5. Size:182K  samhop
 stm4886e.pdf

Green Product STM4886E a S mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 5 @ VGS=10V Suface Mount Package. 30V 17.8A 7.5 @ VGS=4.5V ESD Protected. D 5 4 G D 6 3 S 7 2 D S S O-8 8 1 D S 1 (TA=25 C unless other

 9.6. Size:92K  samhop
 stm4884.pdf

Gre r r P Pr Pr Pro STM4884 SamHop Micrpelectronics Corp. Ver 3.2 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Typ Rugged and reliable. 5.5 @VGS=10V Suface Mount Package. 30V 13A 8.5 @VGS=4.5V D 5 4 G 6 3 D S 7 2 D S SO-8 D 8 1 S 1 (TA=25 C unless otherwise

 9.7. Size:187K  samhop
 stm4820.pdf

Green Product STM4820 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 21 @ VGS=10V Suface Mount Package. 30V 8.9A 30 @ VGS=4.5V ESD Protected. D 5 4 G 6 3 D S 7 2 D S S O-8 8 1 D S 1 (TA=25 C unless otherwi

 9.8. Size:114K  samhop
 stm4886.pdf

Green Product STM4886 a S mHop Microelectronics C orp. Ver 3.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Typ VDSS ID Rugged and reliable. 3.5 @ VGS=10V Suface Mount Package. 30V 18A 5.4 @ VGS=4.5V D 5 4 G 6 3 D S 7 2 S D SO-8 8 1 S D 1 ABSOLUTE MAXIMUM RATINGS (TA=25 C unle

 9.9. Size:113K  samhop
 stm4800s.pdf

S TM4800S S amHop Microelectronics C orp. J un.07 2006 N-Channel E nhancement Mode Field E ffect Transistor PR ODUC T S UMMAR Y FEATUR ES S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m ) Max R ugged and reliable. 20 @ VGS = 10V 30V 8A Surface Mount Package. 28 @ VGS =4.5V SO-8 1 ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted) Limit Unit P