STM4639 Todos los transistores

 

STM4639 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STM4639

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 14 A

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 641 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0085 Ohm

Encapsulados: SOP8

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STM4639 datasheet

 ..1. Size:122K  samhop
 stm4639.pdf pdf_icon

STM4639

Green Product STM4639 a S mHop Microelectronics C orp. Ver 2.1 P-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 8.5 @ VGS=-10V Suface Mount Package. -30V -14A 13 @ VGS=-4.5V ESD Procteced D 5 4 G 6 3 D S 7 2 D S SO- 8 D 8 1 S 1 ) ABSOLUTE MAXIMUM RA

 0.1. Size:108K  samhop
 stm4639t.pdf pdf_icon

STM4639

Green Product STM4639T a S mHop Microelectronics C orp. Ver 1.1 P-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 12.5 @ VGS=-10V Suface Mount Package. -30V -10A 16.5 @ VGS=-4.5V ESD Protected. D 5 4 G 6 3 D S 7 2 D S SO-8 D 8 1 S 1 ABSOLUTE MAXIMUM R

 8.1. Size:157K  samhop
 stm4633.pdf pdf_icon

STM4639

STM4633 a S mHop Microelectronics C orp. Ver 1.0 P-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 33 @ VGS=-10V Suface Mount Package. -30V -7.0A 52 @ VGS=-4.5V ESD Protected. D 5 4 G 6 3 D S 7 2 D S S O-8 D 8 1 S 1 (TA=25 C unless otherwise noted) AB

 8.2. Size:157K  samhop
 stm4637.pdf pdf_icon

STM4639

STM4637 a S mHop Microelectronics C orp. Ver 1.1 P-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 30 @ VGS=-10V Suface Mount Package. -30V -7.7A 48 @ VGS=-4.5V ESD Protected. D 5 4 G D 6 3 S 7 2 D S S O-8 8 1 D S 1 (TA=25 C unless otherwise noted) A

MOSTRAR MÁS

Otros transistores... FDN5630 , FDN8601 , STM4840 , FDN86246 , FDP025N06 , FDP030N06 , FDP032N08 , FDP036N10A , STP65NF06 , FDP038AN06A0 , FDP040N06 , FDP045N10AF102 , STM4637 , FDP047N08 , FDP047N10 , STM4635 , FDP050AN06A0 .

History: SLA08N10G

 

 

 


History: SLA08N10G

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