DMNH10H028SPSQ-13 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DMNH10H028SPSQ-13

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 60 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 40 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5.8 nS

Cossⓘ - Capacitancia de salida: 173 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm

Encapsulados: POWERDI5060-8

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DMNH10H028SPSQ-13 datasheet

 0.1. Size:549K  1
 dmnh10h028spsq-13.pdf pdf_icon

DMNH10H028SPSQ-13

Green DMNH10H028SPSQ 100V 175 C N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Thermally Efficient Package-Cooler Running Applications V(BR)DSS RDS(ON) TC = +25 C High Conversion Efficiency 100V 40A 28m @ VGS = 10V Low RDS(ON) Minimizes On State Losses Low Input Capacitance Fast Switching Speed

 3.1. Size:559K  diodes
 dmnh10h028sk3.pdf pdf_icon

DMNH10H028SPSQ-13

DMNH10H028SK3 Green 100V 175 C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175 C Ideal for High Ambient Temperature ID max V(BR)DSS RDS(ON) max Environments TC = +25 C 100V 28m @ VGS = 10V 55A 100% Unclamped Inductive Switching Ensures More Reliable and Robust End Application Low RDS(ON) Minimises Power Losses Descri

 3.2. Size:396K  diodes
 dmnh10h028sct.pdf pdf_icon

DMNH10H028SPSQ-13

Green DMNH10H028SCT 100V 175 C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175 C Ideal for High Ambient Temperature ID max BVDSS RDS(ON) max Environments TC = +25 C 100% Unclamped Inductive Switching ensures more reliable 100V 28m @ VGS = 10V 60A and robust end application Low Input Capacitance Description Low

 3.3. Size:261K  inchange semiconductor
 dmnh10h028sk3.pdf pdf_icon

DMNH10H028SPSQ-13

isc N-Channel MOSFET Transistor DMNH10H028SK3 FEATURES Drain Current I = 55A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 28m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

MOSTRAR MÁS

Otros transistores... ASDM40N52E-R, AUIRFN8405TR, CJAC100SN08U, CJAC110SN10A, CJAC80SN10, DMN3009LFVW-7, DMN3010LFG-7, DMN3016LPS-13, P55NF06, DMNH4006SPSQ-13, DMP2002UPS-13, DMP22M2UPS-13, DMP3007SPS-13, DMP3010LPSQ-13, DMP3013SFV-13, DMP3013SFV-7, DMP3017SFV-7