DMNH10H028SPSQ-13 Todos los transistores

 

DMNH10H028SPSQ-13 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DMNH10H028SPSQ-13
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 60 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5.8 nS
   Cossⓘ - Capacitancia de salida: 173 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
   Paquete / Cubierta: POWERDI5060-8
 

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DMNH10H028SPSQ-13 Datasheet (PDF)

 0.1. Size:549K  1
 dmnh10h028spsq-13.pdf pdf_icon

DMNH10H028SPSQ-13

GreenDMNH10H028SPSQ 100V 175C N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Thermally Efficient Package-Cooler Running Applications V(BR)DSS RDS(ON) TC = +25C High Conversion Efficiency 100V 40A 28m @ VGS = 10V Low RDS(ON) Minimizes On State Losses Low Input Capacitance Fast Switching Speed

 3.1. Size:559K  diodes
 dmnh10h028sk3.pdf pdf_icon

DMNH10H028SPSQ-13

DMNH10H028SK3 Green100V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175C Ideal for High Ambient Temperature ID max V(BR)DSS RDS(ON) max Environments TC = +25C 100V 28m @ VGS = 10V 55A 100% Unclamped Inductive Switching Ensures More Reliable and Robust End Application Low RDS(ON) Minimises Power Losses Descri

 3.2. Size:396K  diodes
 dmnh10h028sct.pdf pdf_icon

DMNH10H028SPSQ-13

GreenDMNH10H028SCT 100V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175C Ideal for High Ambient Temperature ID max BVDSS RDS(ON) max Environments TC = +25C 100% Unclamped Inductive Switching ensures more reliable 100V 28m @ VGS = 10V 60A and robust end application Low Input Capacitance Description Low

 3.3. Size:261K  inchange semiconductor
 dmnh10h028sk3.pdf pdf_icon

DMNH10H028SPSQ-13

isc N-Channel MOSFET Transistor DMNH10H028SK3FEATURESDrain Current I = 55A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 28m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

MOSTRAR MÁS

Otros transistores... ASDM40N52E-R , AUIRFN8405TR , CJAC100SN08U , CJAC110SN10A , CJAC80SN10 , DMN3009LFVW-7 , DMN3010LFG-7 , DMN3016LPS-13 , IRFB4115 , DMNH4006SPSQ-13 , DMP2002UPS-13 , DMP22M2UPS-13 , DMP3007SPS-13 , DMP3010LPSQ-13 , DMP3013SFV-13 , DMP3013SFV-7 , DMP3017SFV-7 .

 

 
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