DMP3017SFV-7 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DMP3017SFV-7
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 31 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 40 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15.4 nS
Cossⓘ - Capacitancia de salida: 352 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0085 Ohm
Paquete / Cubierta: POWERDI3333-8
Búsqueda de reemplazo de DMP3017SFV-7 MOSFET
DMP3017SFV-7 Datasheet (PDF)
dmp3017sfv-7.pdf

NOT RECOMMENDED FOR NEW DESIGN USE DMP3013SFV DMP3017SFV 30V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type UX) Product Summary Features and Benefits ID Max Low RDS(ON) ensures on-state losses are minimized BVDSS RDS(ON) Max TC = +25C Small form factor thermally efficient package enables higher density end products 10m @ VGS = -10V -40A -30V
dmp3017sfgq.pdf

DMP3017SFGQ 30V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits ID Max Low RDS(ON) Ensures On-State Losses Are Minimized V(BR)DSS RDS(ON) Max TA = +25C Small form factor thermally efficient package enables higher density end products 10m @ VGS = -10V -11.5A -30V Occupies just 33% of the board area occupied by SO-8 enab
dmp3017sfk.pdf

DMP3017SFK P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID V(BR)DSS RDS(on)max Low Input Capacitance TA = +25C 14m @ VGS = -10V -10.4A Low Input/Output Leakage -30V 25m @ VGS = -4.5V -7.8A ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.
dmp3017sfg.pdf

DMP3017SFG30V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits ID max Low RDS(ON) ensures on state losses are minimized V(BR)DSS RDS(ON) max TA = +25C Small form factor thermally efficient package enables higher density end products 10m @ VGS = -10V -11.5A -30V Occupies just 33% of the board area occupied by SO-8 enabli
Otros transistores... DMNH10H028SPSQ-13 , DMNH4006SPSQ-13 , DMP2002UPS-13 , DMP22M2UPS-13 , DMP3007SPS-13 , DMP3010LPSQ-13 , DMP3013SFV-13 , DMP3013SFV-7 , 12N60 , DMP4015SPS-13 , DMT10H015LPS-13 , DMT3006LFV-7 , DMT3006LPS-13 , DMT3009LFVW-7 , DMT31M6LPS-13 , DMT32M5LPS-13 , DMT6004LPS-13 .
History: 2SK636 | NCEP60T12AK | SCT2280KE
History: 2SK636 | NCEP60T12AK | SCT2280KE



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JBE084M | JBE083NS | JBE083M | JMH70R430AK | JMH70R430AF | JMH65R980APLN | JMH65R980AKQ | JMH65R980AK | JMH65R980AF | JMH65R980ACFP | JMH65R640AK | JMH65R600MK | JMH65R600MF | JMPL1025AK | JMPL1025AE | JMPL0648PKQ
Popular searches
2sd424 datasheet | 2sc536 datasheet | bd140 transistor equivalent | tip122 transistor equivalent | irfz44n equivalent | 2n2923 | 2n2102 | mj15003g