DMT3006LPS-13 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DMT3006LPS-13

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 42 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 65 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5.5 nS

Cossⓘ - Capacitancia de salida: 456 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm

Encapsulados: POWERDI5060-8

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DMT3006LPS-13 datasheet

 ..1. Size:337K  1
 dmt3006lps-13.pdf pdf_icon

DMT3006LPS-13

DMT3006LPS Green N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features and Benefits Low RDS(ON) Minimizes On-State Losses ID max Excellent Qgd x RDS(ON) Product (FOM) BVDSS RDS(ON) max TC = +25 C Advanced Technology for DC-DC Converters Small Form Factor Thermally Efficient Package Enables Higher 6m @ VGS = 10V 65A Density En

 4.1. Size:337K  diodes
 dmt3006lps.pdf pdf_icon

DMT3006LPS-13

DMT3006LPS Green N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features and Benefits Low RDS(ON) Minimizes On-State Losses ID max Excellent Qgd x RDS(ON) Product (FOM) BVDSS RDS(ON) max TC = +25 C Advanced Technology for DC-DC Converters Small Form Factor Thermally Efficient Package Enables Higher 6m @ VGS = 10V 65A Density En

 6.1. Size:410K  1
 dmt3006lfv-7.pdf pdf_icon

DMT3006LPS-13

DMT3006LFV 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type UX) Product Summary Features Low RDS(ON) Ensures On-State Losses are Minimized ID Max BVDSS RDS(ON) Max TC = +25 Small Form Factor Thermally Efficient Package Enables Higher C Density End Products 7m @ VGS = 10V 30V 60A Occupies just 33% of the Board Area Occupied by SO-8 Enabling

 6.2. Size:410K  diodes
 dmt3006lfv.pdf pdf_icon

DMT3006LPS-13

DMT3006LFV 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type UX) Product Summary Features Low RDS(ON) Ensures On-State Losses are Minimized ID Max BVDSS RDS(ON) Max TC = +25 Small Form Factor Thermally Efficient Package Enables Higher C Density End Products 7m @ VGS = 10V 30V 60A Occupies just 33% of the Board Area Occupied by SO-8 Enabling

MOSTRAR MÁS

Otros transistores... DMP3007SPS-13, DMP3010LPSQ-13, DMP3013SFV-13, DMP3013SFV-7, DMP3017SFV-7, DMP4015SPS-13, DMT10H015LPS-13, DMT3006LFV-7, IRLB4132, DMT3009LFVW-7, DMT31M6LPS-13, DMT32M5LPS-13, DMT6004LPS-13, DMT6005LPS-13, DMT6009LPS-13, DMT6016LPS-13, DMTH4007LPS-13