G16P03D3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: G16P03D3

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 16 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7.5 nS

Cossⓘ - Capacitancia de salida: 300 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm

Encapsulados: DFN3X3-8L

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G16P03D3 datasheet

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 g16p03d3.pdf pdf_icon

G16P03D3

GOFORD G16P03D3 P-Channel Trench MOSFET Description The G16P03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features VDS -30V Schematic diagram ID (at VGS = -10V) -16A RDS(ON) (at VGS = -10V)

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 g16p03.pdf pdf_icon

G16P03D3

GOFORD G16P03 G16P03 G16P03 Description The G16P03 uses advanced trench technology to provide excellent R , low gate charge . This device is suitable for DS(ON) use as a load switch or in PWM applications. General Features RDS(ON) RDS(ON) VDSS ID @-10V (typ) @-4.5V (typ) Schematic diagram -30V 10.6 16.3 m -16A m High Power and current handing capability Le

 8.2. Size:1073K  goford
 g16p03.pdf pdf_icon

G16P03D3

GOFORD G16P03 Description The G16P03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features Schematic diagram RDS(ON) VDSS ID @-10V (typ) -30V -16A 10 m High Power and current handing capability Le

 8.3. Size:610K  goford
 g16p03s.pdf pdf_icon

G16P03D3

GOFORD G16P03S P-Channel Trench MOSFET Description The G16P03S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDS -30V ID (at VGS = -10V) -16A RDS(ON) (at VGS = -10V)

MOSTRAR MÁS

Otros transistores... DMTH4007LPS-13, DMTH6002LPS-13, DMTH6010LPSQ-13, DMTH8003SPS-13, DMTH8012LPSW-13, EMB06N03V, FDMS86380-F085, G12P03D3, CS150N03A8, GL150N03AD, GL35N03AD3, GT080N10D5, GT110N06D5, HGQ065NE4A, HSBA3016, HSBA4115, HSBA4204