G16P03D3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

G16P03D3 Datasheet (PDF)

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GOFORD G16P03D3P-Channel Trench MOSFETDescriptionThe G16P03D3 uses advanced trench technology to provideexcellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General Features VDS -30V Schematic diagram ID (at VGS = -10V) -16A RDS(ON) (at VGS = -10V)

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GOFORDG16P03G16P03G16P03DescriptionThe G16P03 uses advanced trench technology to provideexcellent R , low gate charge . This device is suitable forDS(ON)use as a load switch or in PWM applications.General FeaturesRDS(ON) RDS(ON) VDSS ID @-10V (typ) @-4.5V (typ) Schematic diagram-30V 10.6 16.3 m -16A m High Power and current handing capability Le

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GOFORDG16P03Description The G16P03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features Schematic diagram RDS(ON) VDSS ID @-10V (typ) -30V -16A 10 m High Power and current handing capability Le

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GOFORD G16P03SP-Channel Trench MOSFETDescriptionThe G16P03S uses advanced trench technology to provideexcellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General FeaturesSchematic diagram VDS -30V ID (at VGS = -10V) -16A RDS(ON) (at VGS = -10V)

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